DMTH4004SK3Q Datasheet PDF - Diodes

www.Datasheet-PDF.com

DMTH4004SK3Q
Diodes

Part Number DMTH4004SK3Q
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


DMTH4004SK3Q datasheet pdf
View PDF for PC
DMTH4004SK3Q pdf
View PDF for Mobile


No Preview Available !

Green DMTH4004SK3Q
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
40V
RDS(ON) Max
3.2mΩ @ VGS = 10V
Qg Typ
68.6nC
ID
TC = +25°C
(Note 10)
100A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC/DC Converters
Features
Rated to +175C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low Qg Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
TO252 (DPAK)
D
D
Top View
D
GS
Top View
Pin Out
G
S
Internal Schematic
Ordering Information (Note 5)
Notes:
Part Number
DMTH4004SK3Q-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T4004S
YYWW
=Manufacturers Marking
T4004S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMTH4004SK3Q
Document number: DS38660 Rev. 1 - 2
1 of 7
www.diodes.com
July 2016
© Diodes Incorporated



No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7)
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.2mH
Avalanche Energy, L=0.2mH
TC = +25°C
(Note 10)
TC = +100°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMTH4004SK3Q
Value
40
±20
100
100
100
160
40
160
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
3.9
38
180
0.8
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
2



Typ
2.6
0.9
4305
1441
102
0.77
68.6
16.8
14.2
9.5
6.7
26.4
8.1
52.4
78.2
Max
1
±100
4
3.2
1.2



Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 32V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 90A
V VGS = 0V, IS = 20A
pF VDS = 25V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDS = 20V, ID = 90A,
VGS = 10V
ns
VDD = 20V, VGS = 10V,
ID = 90A, RG = 3.5Ω
ns
nC
IF = 50A, di/dt = 100A/μs
Notes:
6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions
whilst operating in a steady state.
7. Thermal resistance from junction to solder point (on the exposed drain pin).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
10. Package limited.
DMTH4004SK3Q
Document number: DS38660 Rev. 1 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated



No Preview Available !

DMTH4004SK3Q
150.0
120.0
90.0
60.0
VGS = 10.0V
VGS = 6.0V
VGS=5.0V
VGS = 4.5V
30.0
0.0
0
VGS = 4.0V
VGS = 3.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
3.00
2.90
2.80
2.70
2.60
2.50
2.40
VGS = 10.0V
2.30
2.20
2.10
2.00
10 30 50 70 90 110 130 150
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.006
0.005
VGS = 10V
150175
0.004
0.003
0.002
0.001
125
85
25
-55
0
10 30 50 70 90 110 130 150
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
30
VDS = 5.0V
25
20
15
10
5
0
0
15
125
150
175
85
25
-55
1234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
12
9
6
ID = 100A
3
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.2
2
1.8
1.6
1.4
1.2
1
VGS = 10V, ID = 90A
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMTH4004SK3Q
Document number: DS38660 Rev. 1 - 2
3 of 7
www.diodes.com
July 2016
© Diodes Incorporated



No Preview Available !

0.005
0.004
0.003
0.002
VGS = 10V, ID = 100A
0.001
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Temperature
150
VGS = 0V
120
90
TA = 125oC
60
TA = 150oC
TA = 175oC
30
TA = 85oC
TA = 25oC
TA = -55oC
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
10
8
6
4 VDS = 20V, ID = 90A
2
0
0 10 20 30 40 50 60 70
Qg (nC)
Figure 11. Gate Charge
DMTH4004SK3Q
4
3.5
3
2.5 ID = 1mA
2 ID = 250μA
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs. Temperature
10000
1000
Ciss
Coss
f=1MHz
100
Crss
10
0
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
40
1000
RDS(ON) Limited
PW =10µs
100
PW =100µs
10 PW =1ms
PW =10ms
1
TJ(Max) = 175
TC = 25
Single Pulse
PW =100ms
DUT on Infinite Heatsink
PW =1s
VGS= 10V
0.1
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMTH4004SK3Q
Document number: DS38660 Rev. 1 - 2
4 of 7
www.diodes.com
July 2016
© Diodes Incorporated



DMTH4004SK3Q datasheet pdf
Download PDF
DMTH4004SK3Q pdf
View PDF for Mobile


Related : Start with DMTH4004SK3 Part Numbers by
DMTH4004SK3 N-CHANNEL ENHANCEMENT MODE MOSFET DMTH4004SK3
Diodes
DMTH4004SK3 pdf
DMTH4004SK3Q N-CHANNEL ENHANCEMENT MODE MOSFET DMTH4004SK3Q
Diodes
DMTH4004SK3Q pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact