DMTH10H030LK3 Datasheet PDF - Diodes

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DMTH10H030LK3
Diodes

Part Number DMTH10H030LK3
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMTH10H030LK3
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
100V
RDS(ON) Max
30mΩ @ VGS = 10V
45mΩ @ VGS = 6.0V
ID
TC = +25°C
28A
23A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low QG Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Power Management Functions
DC-DC Converters
Backlighting
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMTH10H030LK3-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TH130LK
YYWW
TH115LK
YYWW
= Manufacturers Marking
TH130LK or TH115LK = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMTH10H030LK3
Document number: DS38737 Rev. 1 - 2
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated



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DMTH10H030LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 3mH
Avalanche Energy, L = 3mH
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
Value
100
±20
28
18
50
2.6
7.5
85
Units
V
V
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
2.1
69
3.5
42
2
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
100
1.4
Typ
1,871
261
6.9
0.75
33.3
6.9
5.1
6.5
7.0
19.7
8.1
37.9
51.9
Max
1
±100
3.5
30
45
1.3
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
V
µA
nA
V
m
V
pF
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = 1mA
VDS = 80V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 20A
VGS = 6.0V, ID = 20A
VGS = 0V, IS = 20A
VDS = 50V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 50V, ID = 10A,
VGS = 10V
VDD = 50V, VGS = 10V,
ID = 10A, RG = 6
IF = 10A, di/dt = 100A/µs
DMTH10H030LK3
Document number: DS38737 Rev. 1 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated



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30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
0.015
VGS = 4.5V
VGS = 5.0V
VGS = 6.0V
VGS = 10V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE(V)
Figure 1. Typical Output Characteristic
3
30
VDS = 10V
25
DMTH10H030LK3
20
15
10
5
0
1
0.1
175oC
150oC
125oC
85oC
25oC
-55oC
1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.013
0.011
0.009
VGS = 6V
VGS = 10V
0.08
0.06
0.04
0.02
ID = 20A
0.007
0
5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0
0 4 8 12 16 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.03
0.025
VGS = 10V
0.02
0.015
175oC
150oC
125oC
85oC
2.4
2.2
2
VGS = 10V, ID = 20A
1.8
1.6
1.4
0.01
0.005
25oC
-55oC
1.2
1
0.8
VGS = 6V, ID = 20A
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMTH10H030LK3
Document number: DS38737 Rev. 1 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated



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0.03
0.025
0.02
VGS = 6V, ID = 20A
0.015
0.01
0.005
VGS = 10V, ID = 20A
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Junction
Temperature
30
VGS = 0V
25
20
15
10 TJ = 175oC
TJ = 150oC
5 TJ = 125oC
0
0 0.3 0.6
TJ = 85oC
TJ = 25oC
TJ = -55oC
0.9 1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
DMTH10H030LK3
4
3.5
3
2.5
ID = 1mA
2
1.5
ID = 250µA
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
10000
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs Junction
Temperature
f = 1MHz
Ciss
1000
100
Coss
Crss
10
1
0
10 20 30 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
50
1000
100
RDS(ON)
Limited
PW =10µs
6
4
VDS = 50V, ID = 10A
2
0
0 5 10 15 20 25 30 35
Qg (nC)
Figure 11. Gate Charge
10
PW = 1s
PW = 100ms
1 PW = 10ms
TJ(Max) = 175PW = 1ms
0.1 TC = 25
Single Pulse
PW = 100µs
DUT on Infinite Heatsink
VGS = 10V
0.01
0.1 1 10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
DMTH10H030LK3
Document number: DS38737 Rev. 1 - 2
4 of 7
www.diodes.com
June 2016
© Diodes Incorporated



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