DMTH10H015LPS Datasheet PDF - Diodes

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DMTH10H015LPS
Diodes

Part Number DMTH10H015LPS
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMTH10H015LPS
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
BVDSS
100V
RDS(ON) Max
16mΩ @ VGS = 10V
18mΩ @ VGS = 6V
ID
TC = +25°C
44A
41A
Description
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and loadswitch.
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
High Conversion Efficiency
Low RDS(ON) Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Motor Control
DC-DC Converters
Power Management
PowerDI5060-8
Pin1
Mechanical Data
Case: PowerDI®5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
D
S
D
SD
Top View
Bottom View
G
S
Internal Schematic
SD
GD
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMTH10H015LPS-13
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
D DDD
TH1015LS
YY WW
= Manufacturer’s Marking
TH1015LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMTH10H015LPS
Document number: DS38713 Rev. 2 - 2
SS SG
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated



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DMTH10H015LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current (Note 7) L=3mH
Avalanche Energy (Note 7) L=3mH
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
100
±20
7.3
5.8
44
28
120
1.5
7.5
85
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
1.3
98
46
2.7
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
100
1.4
Typ
2
11
13.5
18.4
0.9
1,871
261
7
0.75
33.3
6.9
5.1
6.5
7
19.7
8.1
37.9
51.9
Max
1
±100
3
16
18
25
1.3
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMTH10H015LPS
Document number: DS38713 Rev. 2 - 2
2 of 7
www.diodes.com
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 80V, VGS = 0V
nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 10V, ID = 20A
mVGS = 6V, ID = 20A
VGS = 4.5V, ID = 5A
V VGS = 0V, IS = 20A
pF
VDS = 50V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 50V, ID = 10A,
VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 10A, RG = 6
ns
nC IF = 10A, di/dt = 100A/µs
June 2016
© Diodes Incorporated



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30
VGS = 10V
VGS = 6.0V
25 VGS = 5.0V
VGS = 4.5V
20
VGS = 4.0V
15
10
VGS = 3.6V
5
00 0.5
1 1.5
2 2.5 3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
24
20
VGS = 4.5V
16
12 VGS = 10V
8
4
0
0.026
0.024
0.022
0.02
0.018
0.016
5 10 15 20 25
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = 10V
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
0.014
0.012
TA = 25°C
0.01
0.008
TA = -55°C
0.006
0.004 0
5 10 15 20 25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
30
DMTH10H015LPS
30
VDS = 5.0V
25
20
TA = 175°C
15
TA = 150°C
TA = 25°C
10 TA = 125°C
TA = 85°C
TA = -55°C
5
01.5
50
2 2.5 3 3.5 4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4.5
40
30 ID = 20A
20
10
00 4 8 12 16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2.2
20
2 VGS = 10V
ID = 20A
1.8
1.6 VGS = 6.0V
1.4 ID = 20A
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMTH10H015LPS
Document number: DS38713 Rev. 2 - 2
3 of 7
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June 2016
© Diodes Incorporated



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0.03
0.025
0.02
0.015
VGS = 6.0V
ID = 20A
0.01
0.005
VGS = 10V
ID = 20A
0-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
30
25
20
15 TA = 175°C
TA = 150°C
10 TA = 125°C
TA = 85°C
5
TA = 25°C
TA = -55°C
00
10
0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
6
VDS = 50V
4 ID = 10A
2
00 5 10 15 20 25 30 35
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMTH10H015LPS
3
2.8
2.6
2.4
2.2 ID = 1mA
2
ID = 250µA
1.8
1.6
1.4
1.2
1
0.8
0.6-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
Ciss
1000
Coss
100
Crss
10
10 10 20 30 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
1000
RD S( o n )
Limited
PW = 1µs
100
DC
50
PW = 100ms
10 PW = 10ms
PW = 1ms
PW = 100µs
1
PW = 10µs
T J(m ax) = 175°C
0.1 T C = 25°C
VGS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1 1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
1000
DMTH10H015LPS
Document number: DS38713 Rev. 2 - 2
4 of 7
www.diodes.com
June 2016
© Diodes Incorporated



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DMTH10H015LPS N-CHANNEL ENHANCEMENT MODE MOSFET DMTH10H015LPS
Diodes
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