DMTH10H010LCT Datasheet PDF - Diodes

www.Datasheet-PDF.com

DMTH10H010LCT
Diodes

Part Number DMTH10H010LCT
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 6 Pages


DMTH10H010LCT datasheet pdf
View PDF for PC
DMTH10H010LCT pdf
View PDF for Mobile


No Preview Available !

DMTH10H010LCT
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
100V
RDS(ON)
9.5mΩ @VGS = 10V
Package
TO220AB
ID
TC = +25°C
108A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: TO220AB 1.85 grams (Approximate)
TO220AB
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMTH10H010LCT
Case
TO220AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H10H010
YYWW
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
= Manufacturer’s Marking
H10H010 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 15 = 2015)
WW or WW = Week Code (01 to 53)
1 of 6
www.diodes.com
March 2016
© Diodes Incorporated



No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
Maximum Continuous Body Diode Forward Current
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current, L=0.3mH (Note 7)
Avalanche Energy, L=0.3mH (Note 7)
TC = +25°C
TC = +100°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMTH10H010LCT
Value
100
±20
108
76
90
92
10
15
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
100
1.4
Typ
1.9
6.9
2592
792
45
2
53.7
10.6
8.2
11.6
14.1
42.9
22
49.8
85.1
Max
1
±100
3.5
9.5
1.3
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 80V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250 A
mVGS = 10V, ID = 13A
V VGS = 0V, IS = 13A
pF
VDS = 50V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 50V, ID = 13A,
VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 13A, RG = 6Ω
ns
nC IF = 13A, di/dt = 100A/µs
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
2 of 6
www.diodes.com
March 2016
© Diodes Incorporated



No Preview Available !

30
VGS = 10.0V
VGS = 6.0V
25 VGS = 5.0V
VGS = 4.5V
20 VGS = 4.0V
VGS = 3.5V
15
10
5 VGS = 3.0V
0
0 0.5 1 1.5 2 2.5
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.01
3
0.009
0.008
0.007
VGS = 10V
0.006
0.005
0.004
0.003
0.002
0
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
0
5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = 10V
TA = 175C
TA = 150C
TA = 125C
TA = 85C
TA = 25C
TA = -55C
5 10 15 20 25
ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Junction Temperature
30
30
25 VDS = 5.0V
DMTH10H010LCT
20
15
10 TA = 175C
TA = 150C
5
TA = 125C
TA = 85C
TA = 25C
TA = -55C
0
12 3 4 5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.02
0.018
0.016
0.014
0.012
0.01
0.008
ID = 13A
0.006
0.004
0.002
0
0
2.5
4 8 12 16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
6
20
2
VGS = 10V
ID = 13A
1.5
1
0.5
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with
Junction Temperature
175
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
3 of 6
www.diodes.com
March 2016
© Diodes Incorporated



No Preview Available !

0.015
0.012
0.009
0.006
VGS = 10V
ID = 13A
0.003
0
-50
30
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with
Junction Temperature
175
25
20
15 TA = 125 C
10 TA = 150C
TA= 85C
TA = 175C
5
TA = 25C
TA= -55C
0
0
10
0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.5
8
6
4
VDS = 50V, ID = 13A
2
0
0 5 10 15 20 25 30 35 40 45 50 55
Qg (nC)
Figure 11. Gate Charge
DMTH10H010LCT
4
3.5
3
2.5
2
1.5
ID = 250µA
ID = 1mA
1
0.5
0
-50
10000
-25 0 25 50 75 100 125 150
TTJ,AJ,UJUNNCCTITOIONNTTEEMMPPEERRAATTUURREE((°°CC))
Figure 8 Gate Threshold Variation vs.
Junction Temperature
175
f=1MHz
Ciss
1000
Coss
100
Crss
10
0
1000
100
5 10 15 20 25 30 35 40 45 50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
R DS(on)
Limited
PW = 100µs
10
DC
PW = 10s
1 PW = 1s
PW = 100ms
TJ(m ax) = 175°C
0.1 TA = 25°C
PW = 10ms
VGS = 10V
Single Pulse
PW = 1ms
DUT on 1 * MRP Board
0.01
0.1 1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
1000
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
4 of 6
www.diodes.com
March 2016
© Diodes Incorporated



DMTH10H010LCT datasheet pdf
Download PDF
DMTH10H010LCT pdf
View PDF for Mobile


Related : Start with DMTH10H010LC Part Numbers by
DMTH10H010LCT N-CHANNEL ENHANCEMENT MODE MOSFET DMTH10H010LCT
Diodes
DMTH10H010LCT pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact