DMT6005LCT Datasheet PDF - Diodes

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DMT6005LCT
Diodes

Part Number DMT6005LCT
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 6 Pages


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DMT6005LCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) max
6mΩ @ VGS = 10V
10mΩ @ VGS = 4.5V
ID
TC = +25°C
100A
85A
Features
100% Unclamped Inductive Switching ensures more reliable and
robust end application
Low Input Capacitance
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Engine Management Systems
Body Control Electronics
DC-DC Converters
Mechanical Data
Case: TO220-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220-3
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMT6005LCT
TO220-3
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T6005L
YYWW
DMTH6005LCT
Document number: DS38745 Rev. 1 - 2
=Manufacturer’s Marking
T6005L = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Digit of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
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DMT6005LCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
TC = +25°C
TC = +70°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Value
60
20
100
80
83
130
29.5
43.5
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
2.3
52.8
104
1.2
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
60
1
Typ
4.5
8.8
2,962
965.2
59.8
0.66
47.1
23.1
10.2
12.5
8.3
9.4
22
8.9
40.4
49.7
Max
1
±100
3
6
10
1.2
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on infinite heat sink.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 48V, VGS = 0V
nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 10V, ID = 20A
mΩ VGS = 4.5V, ID = 12.5A
V VGS = 0V, IS = 20A
pF
VDS = 30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 30V, ID = 50A
ns
VDD = 30V, VGS = 10V,
ID = 30A, RG = 3.3Ω
ns
nC
IF = 30A, di/dt = 100A/μs
DMTH6005LCT
Document number: DS38745 Rev. 1 - 2
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50
45
VGS = 10V
40
VGS = 6V
35 VGS = 5V
30
VGS = 4.5V
VGS = 4.0V
25
20
15
10 VGS = 3.5V
5
0
0
15
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2
12
VGS = 4.5V
9
6 VGS = 10V
3
0
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
TA = 150°C
8
TA = 125°C
TA = 85°C
6
TA = 25°C
4 TA = -55°C
2
VGS = 10V
0
0 5 10 15 20 25
I D, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
30
VDS = 10V
25 TA = 150°C
TA = 125°C
20
TA = 85°C
TA = 25°C
15
TA = -55°C
10
DMT6005LCT
5
0
0
20
18
16
14
12
10
8
6
4
2
0
2
2
1 234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
ID = 20A
ID = 12.5A
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
1.8
1.6
VGS = 10V
1.4 ID = 20A
1.2
1 VGS = 4.5V
ID = 12.5A
0.8
0.6
0.4
-50 -25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMTH6005LCT
Document number: DS38745 Rev. 1 - 2
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July 2016
© Diodes Incorporated



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14
12
VGS = 4.5V
10 ID = 12.5A
8
6 VGS = 10V
ID = 20A
4
2
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
30
25
TA = 150°C
20
TA = 125°C
15 TA = 85°C
10 TA = 25°C
5 TA = -55°C
0
0 0.3 0.6 0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.2
10
9
8
7 VDS = 30V
ID = 50A
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMT6005LCT
3.5
3
2.5 ID = 1mA
2
ID = 250µA
1.5
1
0.5
0
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
10000
Ciss
f=1MHz
1000
100
Coss
Crss
10
0 5 10 15 20 25 30 35 40
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
1000
100
RD S( o n )
Limited
PW = 10µs
PW = 1s
10
PW = 100ms
PW = 10ms
1 PW = 1ms
T J(m ax) = 150°C
0.1 T A = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
PW = 100µs
10
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMTH6005LCT
Document number: DS38745 Rev. 1 - 2
4 of 6
www.diodes.com
July 2016
© Diodes Incorporated



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