DMT3003LFG Datasheet PDF - Diodes

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DMT3003LFG
Diodes

Part Number DMT3003LFG
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMT3003LFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
30V
RDS(ON) Max
3.2mΩ @ VGS = 10V
5.5mΩ @ VGS = 4.5V
ID Max
TC = +25°C
100A
85A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Features and Benefits
Low RDS(ON) Ensures On-State Losses are Minimized
Excellent QGD × RDS(ON) Product (FOM)
Advanced Technology for DC-DC Converts
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
100% UIS (Avalanche) Rated
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
Backlighting
Power Management Functions
DC-DC Converters
Case: PowerDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
PowerDI3333-8
S Pin 1
S
S
G
1
2
D
8
7
D
D
D
D
3
4
6G
5
S
Top View
Bottom View
Top View
Internal Schematic
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT3003LFG-7
DMT3003LFG-13
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI is a registered trademark of Diodes Incorporated.
DMT3003LFG
Document number: DS37819 Rev. 2 - 2
SG2
SG2 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
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DMT3003LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L=1mH
Avalanche Energy, L=1mH
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
30
±20
100
90
22
18
3
100
16
250
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.4
52
62
2
-55 to +150
Units
V
V
A
A
A
A
A
mJ
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Bodyy Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
Min
30
Typ Max
——
1
±100
VGS(TH)
RDS(ON)
VSD
1
3
2.4 3.2
4 5.5
0.75 1
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
2,370
1,360
240
0.6
20
44
7
8
6.2
4.3
21
8
25
37
Unit
Test Condition
V VGS = 0V, ID = 1mA
μA VDS = 24V, VGS = 0V
nA VGS = +20V, VDS = 0V
VGS = -16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 15A
V VGS = 0V, IS = 10A
pF
VDS = 15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 15V, ID = 20A
ns
VDD = 15V, VGS = 10V,
RL = 0.75, RG = 3, ID = 20A
ns
nC
IF = 15A, di/dt = 500A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT3003LFG
Document number: DS37819 Rev. 2 - 2
2 of 7
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June 2016
© Diodes Incorporated



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30.0
25.0
20.0
15.0
10.0
VGS = 10.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
VGS = 2.8V
5.0
0.0
0
VGS = 2.2V
VGS = 2.5V
0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
0.006
0.005
0.004
VGS = 4.5V
0.003
0.002
0.001
VGS = 10V
0
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.005
0.004
VGS = 10V
150oC
0.003
0.002
0.001
125oC
85oC
25oC
-55oC
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
DMT3003LFG
30
VDS = 5V
25
20
15
85oC
10
125oC
25oC
5
150oC
-55oC
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
ID = 20A
2 4 6 8 10 12 14 16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.5
2
VGS = 10V, ID = 20A
1.5
1
VGS = 4.5V, ID = 15A
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMT3003LFG
Document number: DS37819 Rev. 2 - 2
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DMT3003LFG
0.008
0.007
0.006
0.005
VGS = 4.5V, ID = 15A
0.004
0.003
0.002
0.001
VGS = 10V, ID = 20A
0
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Junction
Temperature
20
VGS = 0V
15
10
TJ = 125oC
5 TJ = 150oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
2.5
2
ID = 1mA
1.5
ID = 250µA
1
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
f=1MHz
Ciss
1000
Coss
100
Crss
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
10
0
5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
1000
RDS(ON) Limited
100
PW =100µs
6
4
VDS = 15V, ID = 20A
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg (nC)
Figure 11. Gate Charge
10
PW =1ms
1 PW =10ms
0.1
0.01
TJ(Max) = 150PW =100ms
TA = 25
PW =1s
Single Pulse
DUT on 1*MRP Board
PW =10s
VGS=10V
DC
0.01 0.1 1 10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMT3003LFG
Document number: DS37819 Rev. 2 - 2
4 of 7
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June 2016
© Diodes Incorporated



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DMT3003LFG N-CHANNEL ENHANCEMENT MODE MOSFET DMT3003LFG
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