DMT10H015LCG Datasheet PDF - Diodes


www.Datasheet-PDF.com

DMT10H015LCG
Diodes

Part Number DMT10H015LCG
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages

DMT10H015LCG datasheet pdf
View PDF for PC
DMT10H015LCG pdf
View PDF for Mobile


No Preview Available !

DMT10H015LCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
100V
RDS(ON) Max
15mΩ @ VGS = 10V
19.5mΩ @ VGS = 6V
ID
TC = +25°C
34A
32A
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) and yet maintain superior switching
performance. This device is ideal for use in Notebook battery power
management and Loadswitch..
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: V-DFN3333-8 (Type B)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (Approximate)
Top View
Pin 1
S
S
S
G
D
D DD
Bottom View
D
Top View
Internal Schematic
G
S
Equivalent circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT10H015LCG-7
DMT10H015LCG-13
Case
V-DFN3333-8 (Type B)
V-DFN3333-8 (Type B)
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T10 = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated



No Preview Available !

DMT10H015LCG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current, VGS = 10V (Note 6)
Steady
State
Continuous Drain Current, VGS = 10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 3mH (Note 8)
Avalanche Energy, L = 3mH (Note 8)
TA = +25C
TA = +70C
TC = +25C
TC = +100C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
100
±20
9.4
7.5
34
21
1.6
54
7.5
85
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1
118
2.1
59
4.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
100
1.4
Typ
2
12.1
15
18.9
0.9
1871
261
6.9
0.75
33.3
6.9
5.1
6.5
7
19.7
8.1
37.9
51.9
Max
1
±100
3.5
15
19.5
26
1.3
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 80V, VGS = 0V
nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 10V, ID = 20A
VGS = 6V, ID = 20A
mΩ VGS = 4.5V, ID = 5A
V VGS = 0V, IS = 20A
pF
VDS = 50V, VGS = 0V
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 50V, ID = 10A,
VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 10A, Rg = 6Ω
ns
nC IF = 10A, di/dt = 100A/µs
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated



No Preview Available !

30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
0.025
VGS = 10.0V
VGS = 6.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
DMT10H015LCG
30
VDS = 5V
25
20
15
10
5
0
1.5
0.05
150
125
85
25
-55
2 2.5 3 3.5 4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
4.5
0.02
0.015
0.01
VGS = 4.5V
VGS = 6V
VGS = 10V
0.04
0.03
0.02
0.01
ID = 5A
ID = 20A
0.005
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.03
0.025
VGS = 10V
150
0.02
0.015
0.01
0.005
125
85
25
-55
0
0
1.8
1.6
1.4
1.2
1
0.8
5 10 15
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
VGS = 6V, ID = 20A
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 5A
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
0.6
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
150
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated



No Preview Available !

DMT10H015LCG
0.04
0.03
0.02
VGS = 4.5V, ID = 5A
VGS = 6V, ID = 20A
0.01
VGS = 10V, ID = 20A
0
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Junction
Temperature
150
30
VGS = 0V
25
20
15
10
TJ = 125oC
TJ = 85oC
TJ = 25oC
5
TJ = 150oC
TJ = -55oC
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
10
8
2.8
2.6
2.4
2.2 ID = 1mA
2
1.8
1.6 ID = 250μA
1.4
1.2
1
0.8
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
f=1MHz
Ciss
1000
100
Coss
10
Crss
1
0
10 20 30 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
RDS(ON) Limited
10
PW =100µs
50
6
1
PW =1ms
PW =10ms
4 0.1 PW =100ms
PW =1s
2
VDS = 50V, ID = 10A
0.01
TJ(Max) = 150
TC = 25
Single Pulse
DUT on 1*MRP Board
PW =10s
DC
VGS= 10V
0 0.001
0 5 10 15 20 25
Qg (nC)
Figure 11. Gate Charge
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
30 35
4 of 7
www.diodes.com
0.01
0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
June 2016
© Diodes Incorporated




DMT10H015LCG datasheet pdf
Download PDF
DMT10H015LCG pdf
View PDF for Mobile


Similiar Datasheets : DMT10H015LCG DMT10H015LFG DMT10H015LK3 DMT10H015LPS DMT10H015LSS

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact