DMNH6042SPDQ Datasheet PDF - Diodes

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DMNH6042SPDQ
Diodes

Part Number DMNH6042SPDQ
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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DMNH6042SPDQ
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
50m@ VGS = 10V
65m@ VGS = 4.5V
ID Max
TC = +25°C
24A
21A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC-DC Converters
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low Qg Minimiszs Switching Losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: PowerDI5060-8 (Type C)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Top View
Pin1
Bottom View
D1 D2
S1 D1
G1 D1
S2
D2 G1
G2
G2 D2
Pin Out
Top View
S1 S2
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMNH6042SPDQ-13
Case
PowerDI5060-8 (Type C)
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 D2 D2
H6042SD
YY WW
= Manufacturer’s Marking
H6042SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
S1 G1 S2 G2
DMNH6042SPDQ
Document number: DS37388 Rev. 4 - 2
1 of 7
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DMNH6042SPDQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
Continuous Drain Current (Note 8) VGS = 10V
Steady
State
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 8)
Avalanche Current (Note 9) L = 10mH
Avalanche Energy (Note 9) L = 10mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
60
±20
5.7
4.6
24
17
32
24
3.5
65
Value
1.2
105
54
2.5
51
26
3.5
-55 to +175
Unit
V
V
A
A
A
A
A
mJ
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
60
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1.0
Typ
34
45
0.8
584
83
24
3.8
4.2
8.8
1.8
1.8
3.4
1.9
10.1
4.5
12.9
5.4
Max
1
±100
3.0
50
65
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 5.1A
VGS = 4.5V, ID = 4.4A
V VGS = 0V, IS = 2.6A
pF
pF VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 44V, ID = 5.2A
nC
ns
ns VGS = 10V, VDS = 30V,
ns RG = 6Ω, ID = 1A
ns
ns IF = 2.6A, di/dt = 100A/μs
nC IF = 2.6A, di/dt = 100A/μs
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
DMNH6042SPDQ
Document number: DS37388 Rev. 4 - 2
2 of 7
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June 2016
© Diodes Incorporated



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DMNH6042SPDQ
20
VGS = 10V
18
16 VGS = 5.0V
VGS = 4.5V
14
VGS = 4.0V
12
10
8
VGS = 3.5V
6
4
2
VGS = 2.8V
VGS = 3.0V
00 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
20
VDS = 5.0V
NT()A 15
RE
R
U
C
10
N
RAI
D
,
I
D
5
0
1
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
2345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
0.08
0.07
0.06
0.05
VGS = 4.5V
0.04
0.03
VGS = 10V
0.02
0.01
0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.4
2.2
2
VGS = 10V
ID = 5.1A
1.8
1.6 VGS = 4.5V
1.4 ID = 4.4A
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
)
(E
0.08
0.075
VGS = 10V
C
N
0.07
TA 0.065
S
SI 0.06
E
R
N-
0.055
O 0.05
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
E
C
0.045
R
U
O
0.04
N-S 0.035
AI 0.03
R
D 0.025
, )N
O
0.02
(S
RD
0.015
TA = 25°C
TA = -55°C
0.01
1 3 5 7 9 11 13 15 17 19
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
21
0.1
0.09
0.08
0.07
0.06
VGS = 4.5V
ID = 4.4A
0.05
0.04
0.03
VGS = 10V
ID = 5.1A
0.02
0.01
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMNH6042SPDQ
Document number: DS37388 Rev. 4 - 2
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DMNH6042SPDQ
2.5
2.2
ID = 1mA
1.9
ID = 250µA
1.6
1.3
1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Junction Temperature
10000
NT()nA 1000
RE
R
U
C 100
GE
KA
EA
L
10
N
RAI
D
,
I
DSS
1
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.1
0 5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
10
30
28
26
NT(A)
RE
R
24
22
20
18
U
C
16
CE 14
R
U
12
O
S
10
,
I
S
8
6
4
2
00
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
1000
f=1MHz
Ciss
100
Coss
Crss
10
0 5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
RDS(on)
Limited
8
6 VDS = 44V, ID = 5.2A
4
2
0
02468
Qg (nC)
Figure 11 Gate Charge
DMNH6042SPDQ
Document number: DS37388 Rev. 4 - 2
NT(A) 10
RE
R
U
C
1
DC
PW= 10s
N PW= 1s
RAI PW= 100ms
D
,
I
D
0.1
TJ(max) = 150°C
PW= 10ms
PW= 1ms
TA = 25°C
VGS = 10V
PW= 100µs
Single Pulse
0.01 DUT on 1 * MRP Board
0.1 1 10 100
10 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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June 2016
© Diodes Incorporated



DMNH6042SPDQ datasheet pdf
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