DMNH6042SK3Q Datasheet PDF - Diodes

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DMNH6042SK3Q
Diodes

Part Number DMNH6042SK3Q
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMNH6042SK3Q
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
50m@ VGS = 10V
65m@ VGS = 4.5V
ID Max
TC = +25°C
25A
22A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported up by
a PPAP and is ideal for use in:
Driving Solenoids
Driving Relays
Power Management Functions
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, ―Green‖ Molding Compound; UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.315 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMNH6042SK3Q-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H6042S
YYWW
= Manufacturers Marking
H6042S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMNH6042SK3Q
Document number: DS38902 Rev. 2 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 8) VGS = 10V
Steady
State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 8)
Avalanche Current (Note 9) L = 10mH
Avalanche Energy (Note 9) L = 10mH
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMNH6042SK3Q
Value
60
±20
25
17
40
25
3.5
65
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
2
73
36
3.5
43
21
3.2
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
1.0
Typ
30
45
0.8
584
83
24
3.8
4.2
8.8
1.8
1.8
3.4
1.9
10.1
4.5
12.9
5.4
Max
1
±100
3.0
50
65
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 6A
VGS = 4.5V, ID = 6A
V VGS = 0V, IS = 2.6A
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 44V, ID = 5.2A
nC
ns
ns VGS = 10V, VDS = 30V,
ns RG = 6Ω, ID = 1A
ns
ns
nC
IF = 2.6A, di/dt = 100A/μs
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
DMNH6042SK3Q
Document number: DS38902 Rev. 2 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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30.0
25.0
VGS = 8.0V
VGS = 5.0V
30
VDS = 5V
25
DMNH6042SK3Q
20.0
15.0
10.0
VGS = 10V
VGS = 4.5V
VGS = 4.0V
5.0
0.0
0
0.08
VGS = 3.3V
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
0.07
0.06
0.05
VGS = 4.5V
0.04
0.03
0.02
VGS = 10V
0.01
0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
0.08
0.07
VGS = 10V
TJ = 175oC
0.06
0.05
0.04
TJ = 125oC
TJ = 150oC
TJ = 85oC
0.03
TJ = 25oC
0.02
0.01
TJ = -55oC
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
20
15
10
5
0
1
0.1
TJ = 175oC
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
2345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
0.09
0.08
ID = 5.1A
0.07
0.06
0.05
0.04
0.03
0.02
ID = 4.4A
0.01
2
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
2.4
2.2
2 VGS = 10V, ID = 5.1A
1.8
1.6
1.4
1.2
1 VGS = 4.5V, ID = 4.4A
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMNH6042SK3Q
Document number: DS38902 Rev. 2 - 2
3 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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0.1
0.09
0.08
0.07
VGS = 4.5V, ID = 4.4A
0.06
0.05
0.04
0.03
0.02
VGS = 10V, ID = 5.1A
0.01
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Temperature
30
VGS = 0V
25
20
TA = 175oC
15 TA = 150oC
TA = 125oC
10 TA = 85oC
TA = 25oC
5
TA = -55oC
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
6
4
VDS = 44V, ID = 5.2A
2
0
0 2 4 6 8 10
Qg (nC)
Figure 11. Gate Charge
DMNH6042SK3Q
2.8
2.6
2.4
2.2 ID = 1mA
2
1.8
1.6 ID = 250µA
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs Junction
Temperature
1000
f = 1MHz
Ciss
100
Coss
Crss
10
0
5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
RDS(ON)
Limited
PW = 10µs
10
PW = 1s
PW = 100ms
PW = 10ms
1 TJ(Max) = 175
PW = 1ms
TC = 25
Single Pulse
PW = 100µs
DUT on Infinite Heatsink
VGS = 10V
0.1
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMNH6042SK3Q
Document number: DS38902 Rev. 2 - 2
4 of 7
www.diodes.com
August 2016
© Diodes Incorporated



DMNH6042SK3Q datasheet pdf
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DMNH6042SK3Q pdf
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