DMNH6022SSDQ Datasheet PDF - Diodes

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DMNH6022SSDQ
Diodes

Part Number DMNH6022SSDQ
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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DMNH6022SSDQ
60V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
27mΩ @ VGS = 10V
30mΩ @ VGS = 6V
ID
TC = +25°C
22.6A
21.5A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC-DC Converters
SO-8
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low Qg Minimizes Switching Losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, ―Green‖ Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D1 D2
Pin1
Top View
S1 D1
G1 D1
S2 D2
G2 D2
Top View
Pin Configuration
G1
G2
S1
Equivalent Circuit
S2
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMNH6022SSDQ-13
SO-8
2,500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
85
NH6022SD
YY WW
= Manufacturer’s Marking
NH6022SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
14
DMNH6022SSDQ
Document number: DS38694 Rev. 4 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current VGS = 10V (Note 7)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current L = 0.1mL (Note 8)
Avalanche Energy L = 0.1mL (Note 8)
TC = +25°C
TC = +100°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMNH6022SSDQ
Value
60
±20
22.6
16.0
7.1
5.9
45
2
22
24
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
t<10s
TA = +25°C
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.5
104
60
2.1
74
42
7.25
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at (VGS = 10V)
Total Gate Charge at (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
1.0
Typ
21
24
0.8
2127
86
54
2.0
32
14
7
4
5.4
4.4
30.4
8.4
18.1
12.5
Max
1
±100
3.0
27
30
1.2
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
Unit
V
µA
nA
V
m
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
VGS = 0V, ID = 250μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5A
VGS = 6V, ID = 5A
VGS = 0V, IS = 1.7A
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 30V, ID = 6A
VGS = 10V, VDS = 30V,
RG = 6Ω, ID = 1A
IF = 1.7A, di/dt = 100A/μs
IF = 1.7A, di/dt = 100A/μs
DMNH6022SSDQ
Document number: DS38694 Rev. 4 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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30.0
25.0
20.0
15.0
VGS = 5.0V
VGS = 6.0V
VGS = 10V
VGS = 4.0V
10.0
5.0
VGS = 3.5V
VGS = 3.2V
0.0
0
0.05
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
0.04
0.03
0.02
0.01
VGS = 6.0V
VGS = 10V
0
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
0.06
VGS = 10V
TJ = 175oC
0.05
0.04
0.03
0.02
0.01
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Junction Temperature
30
VDS = 5V
25
DMNH6022SSDQ
20
15
10
5
0
0
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
2.5
2
TJ = 175oC
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
12345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
ID = 5A
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
VGS = 10V, ID = 5A
1.5
VGS = 6V, ID = 5A
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMNH6022SSDQ
Document number: DS38694 Rev. 4 - 2
3 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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0.06
0.05
0.04
VGS = 6V, ID = 5A
0.03
0.02
0.01
VGS = 10V, ID = 5A
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Junction
Temperature
30
VGS = 0V
25
20
15
10
5
0
0
10
TJ = 175oC
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
1.5
9
8
7
6
5
4
3 VDS = 30V, ID = 6A
2
1
0
0 5 10 15 20 25 30 35
Qg (nC)
Figure 11. Gate Charge
DMNH6022SSDQ
4
3.5
3
ID = 1mA
2.5
2
ID = 250µA
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs Junction
Temperature
10000
f = 1MHz
Ciss
1000
100
Coss
Crss
10
0 5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
RDS(ON)
Limited
10
1 DC
PW = 10s
0.1
0.01
0.001
PW = 1s
PW = 100ms
TJ(Max) = 175PW = 10ms
TC = 25
PW = 1ms
Single Pulse
DUT on 1*MRP Board
PW = 100µs
VGS = 10V
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMNH6022SSDQ
Document number: DS38694 Rev. 4 - 2
4 of 7
www.diodes.com
August 2016
© Diodes Incorporated



DMNH6022SSDQ datasheet pdf
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