DMNH6021SPDQ Datasheet PDF - Diodes

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DMNH6021SPDQ
Diodes

Part Number DMNH6021SPDQ
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Product Summary
V(BR)DSS
60V
RDS(ON) Max
25m@ VGS = 10V
40m@ VGS = 4.5V
DMNH6021SPDQ
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Features and Benefits
ID Max
TC = +25°C
32A
25A
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
High Conversion Efficiency
Low RDS(ON) Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Backlighting
Power Management Functions
DC-DC Converters
S1
Mechanical Data
Case: PowerDI®5060-8 (Type C)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
D1 D1
D2
G1 D1
S2
D2 G1
G2
Pin1
Top View
Bottom View
Ordering Information (Note 5)
G2
Pin Out
Top View
D2
S1 S2
Equivalent Circuit
Notes:
Part Number
Case
Packaging
DMNH6021SPDQ-13
PowerDI5060-8 (Type C)
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI is a registered trademark of Diodes Incorporated.
DMNH6021SPDQ
Document number: DS38111 Rev. 2 - 2
= Manufacturer’s Marking
H6021SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
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DMNH6021SPDQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = 10V
Continuous Drain Current (Note 8) VGS = 10V
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 8)
Avalanche Current, L = 0.1mH (Note 9)
Avalanche Energy, L = 0.1mH (Note 9)
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
60
±20
8.2
6.5
32
22
80
32
35
64
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.5
99
53
2.8
54
27
2.2
-55 to +175
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 6V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
60
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1
Typ
15
21
0.75
1,143
168
69
2.1
20.1
12
4.3
5.5
4.4
6.0
14.2
5.4
21.2
15.2
Max
1
±100
3
25
40
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
V VGS = 0V, IS = 2.6A
pF
pF VDS = 25V, VGS = 0V,
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 30V, ID = 20A,
nC
ns
ns VDD = 30V, VGS = 10V,
ns RG = 4.7, ID = 20A
ns
ns IF=20A, di/dt=100A/μs
nC
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
DMNH6021SPDQ
Document number: DS38111 Rev. 2 - 2
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30
VGS = 10V
25 VGS = 8V
VGS = 4.5V
VGS = 4V
20
VGS = 3.5V
15
10
VGS = 3.0V
5
00 0.5
1 1.5
2 2.5
3
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
30
25
20 VGS = 4.5V
15
VGS = 10V
10
5
5 10 15 20 25 30 35 40 45
I D, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
40
VGS = 10V
35
50
30 TA = 175°C
TA = 150°C
25 TA = 125°C
20 TA = 85°C
15 TA = 25°C
10
TA = -55°C
5
00 5 10 15 20 25 30 35 40 45 50
I D, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMNH6021SPDQ
30
VDS = 5.0V
25
20
TA = 175°C
15
TA = 150°C
10
TA = 125°C
TA = 85°C
TA = 25°C
5 TA = -55°C
0
1.5
40
2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
35
30
25 ID = 12A
20
15
10
5
2 4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2.4
20
2.2
VGS = 10V
2 ID = 12A
1.8
1.6 VGS = 4.5V
ID = 5A
1.4
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMNH6021SPDQ
Document number: DS38111 Rev. 2 - 2
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DMNH6021SPDQ
40
35
VGS = 10V
30 ID = 12A
25
20 VGS = 4.5V
ID = 12A
15
10
5
0-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
50
43
36
29
TA = 175°C
22 TA = 150°C
TA = 125°C
15
TA = 85°C
8
TA = 25°C
TA = -55°C
10 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
6 VDS = 30V
ID = 20A
4
2
00 2 4 6 8 10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
2.4
2.2
2
1.8 ID = 1mA
1.6 ID = 250µA
1.4
1.2
1
0.8-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
1000
C iss
100
C oss
C rss
10
0 5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
R DS(on)
Limited
PW = 10µs
DC PW = 1µs
10 PW = 100ms
PW = 10ms
PW = 1ms
1
TJ(m ax) = 175°C
TC = 25°C
VGS = 10V
Single Pulse
DUT on Infinite Heatsink
0.1
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMNH6021SPDQ
Document number: DS38111 Rev. 2 - 2
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© Diodes Incorporated



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