DMNH6012LK3 Datasheet PDF - Diodes

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DMNH6012LK3
Diodes

Part Number DMNH6012LK3
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMNH6012LK3
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) max
12m@ VGS = 10V
18m@ VGS = 4.5V
ID max
TC = +25°C
60A
50A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101 and ideal for use
in:
Body Control Electronics
DC/DC Converters
Features
Rated to +175°C - Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMNH6012LK3-13
Case
TO252
Packaging
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H6012L
YYWW
=Manufacturers Marking
H6012L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
DMNH6012LK3
Document number: DS37381 Rev. 3 - 2
1 of 7
www.diodes.com
October 2015
© Diodes Incorporated



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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH (Note 7)
Avalanche Energy, L = 0.1mH (Note 7)
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMNH6012LK3
Value
60
±20
60
40
120
2.6
45
100
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
2.0
74
3.8
40
1.2
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current, TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
60
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1
Typ
8
10
0.7
1926
330
112
2.0
16.3
35.2
7.6
6.9
6.4
11.9
16.5
5
28
23
Max
1
±100
3
12
18
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
V VGS = 0V, IS = 1.7A
pF
pF VDS = 30V, VGS = 0V,
f = 1MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 30V, ID = 25A
nC
ns
ns VGS = 10V, VDS = 30V,
ns RG = 3Ω, ID = 25A
ns
ns
nC
IF = 25A, di/dt = 100A/μs
DMNH6012LK3
Document number: DS37381 Rev. 3 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated



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30.0
25.0
VGS=4.5V
VGS=4.0V
20.0
15.0
VGS=10.0V
10.0
VGS=3.5V
5.0
0.0
0
VGS=3.0V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
25.00
20.00
15.00
VGS=4.5V
10.00
VGS=10.0V
5.00
5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.02
VGS=10V
125150
175
0.015
0.01
0.005
85
25
-55
0
5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
15
VDS=5V
12
DMNH6012LK3
9
6
125
3 150
175
85
25
-55
0
1.5 2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
4
40
35
30
25
20
ID=25A
15
10
5
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.4
2.2
2 VGS=10V, ID=25A
1.8
1.6
1.4
1.2
1 VGS=4.5V, ID=25A
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMNH6012LK3
Document number: DS37381 Rev. 3 - 2
3 of 7
www.diodes.com
October 2015
© Diodes Incorporated



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0.03
0.025
0.02
0.015
VGS=4.5V, ID=25A
0.01
0.005
VGS=10V, ID=25A
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Temperature
30
25
VGS=0V, TA=125
20
VGS=0V, TA=150
15 VGS=0V, TA=175
VGS=0V,
TA=85
10 VGS=0V,
TA=25
5 VGS=0V,
TA=-55
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10000
f=1MHz
1000
100
Ciss
Coss
Crss
DMNH6012LK3
3
2.8
2.6
2.4
2.2 ID=1mA
2
1.8 ID=250μA
1.6
1.4
1.2
1
0.8
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs. Junction
Temperature
100000
10000
1000
175
150
125
85
100
10
25
1
0.1
0 10 20 30 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
10
8
6
VDS=30V, ID=25A
4
2
10
0
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
40
0
0 5 10 15 20 25 30 35 40
Qg (nC)
Figure 12. Gate Charge
DMNH6012LK3
Document number: DS37381 Rev. 3 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated



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