DMNH6008SCT Datasheet PDF - Diodes

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DMNH6008SCT
Diodes

Part Number DMNH6008SCT
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMNH6008SCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON)
8.0m@ VGS = 10V
ID
TC = +25°C
130A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low Input Capacitance
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH6008SCTQ)
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
D
TO220AB
G
Top View
Bottom View
S
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMNH6008SCT
Case
TO220AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMNH6008SCT
Document number: DS38138 Rev. 2 - 2
6008SCT = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week (01 to 53)
6008S CT
YYWW
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DMNH6008SCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Steady
State
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current (Note 6) L=0.1mH
Avalanche Energy (Note 6) L=0.1mH
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
Value
60
20
130
90
200
80
62
190
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5) TC = +25°C
TC = +100°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJC
TJ, TSTG
Value
210
100
0.7
-55 to +175
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
2
Typ
6.0
0.7
2,596
437
118
2.0
21
40
8.3
11.8
5.7
5.0
15.6
3.4
33
33
Max
1
±100
4
8.0
1.2
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 48V, VGS = 0V
nA VGS = 16V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 20A
V VGS = 0V, IS = 1A
pF
VDS = 30V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDD = 30V, ID = 20A
ns
VDD = 30V, VGS = 10V,
RG = 1, ID = 20A
ns
nC IF = 20A, di/dt = 100A/µs
DMNH6008SCT
Document number: DS38138 Rev. 2 - 2
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DMNH6008SCT
50.0
45.0
40.0
35.0
VGS = 10.0V
VGS=5.0V
VGS = 4.5V
30.0
25.0
20.0
15.0
10.0
VGS = 4.0V
5.0
0.0
0
VGS = 3.5V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
10.00
9.00
8.00
7.00
6.00
5.00
VGS = 10V
4.00
3.00
2.00
1.00
0.00
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
20
VDS = 5.0V
15
10
5
0
0
20
18
16
14
12
10
8
6
4
2
0
2
TJ=85
TJ=125
TJ=T1J7=5150
TJ=25
TJ=-55
12345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
ID = 20A
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
0.016
0.014
0.012
TJ=175
TJ=150
VGS = 10V
0.01
0.008
0.006
0.004
0.002
TJ=125
TJ=85
TJ=25
TJ=-55
0
0 5 10 15 20
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
2.2
2
1.8
1.6
1.4
1.2
1
0.8 VGS = 10V, ID = 20A
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
175
DMNH6008SCT
Document number: DS38138 Rev. 2 - 2
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DMNH6008SCT
0.016
0.014
0.012
0.01
0.008
0.006
0.004
VGS = 10V, ID = 20A
0.002
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Temperature
20
18 VGS = 0V
16
14
12
10
8 TJ = 125oC
6 TJ = 150oC
4 TJ = 175oC
TJ = 85oC
TJ = 25oC
2 TJ = -55oC
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
3.5
3
ID = 1mA
2.5
2 ID = 250μA
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs. Junction
Temperature
175
10000
f=1MHz
Ciss
1000
Coss
100 Crss
10
0
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
40
1000
RDS(ON) Limited
100
PW =1µs
6 VDS = 30V, ID = 20A
4
2
0
0 10 20 30
Qg - (nC)
Figure 11. Gate Charge
40
10
PW =10µs
PW =100µs
PW =1ms
PW =10ms
1 PW =100ms
PW =1s
0.1 TJ(Max) = 175TC = 25
Single Pulse
DUT on infinite heatsink
0.01 VGS= 10V
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMNH6008SCT
Document number: DS38138 Rev. 2 - 2
4 of 7
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June 2016
© Diodes Incorporated



DMNH6008SCT datasheet pdf
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