DMNH4011SPS Datasheet PDF - Diodes

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DMNH4011SPS
Diodes

Part Number DMNH4011SPS
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMNH4011SPS
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Features
BVDSS
40V
RDS(ON) max
10mΩ @ VGS = 10V
ID
TC = +25°C
80A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Engine Management Systems
Body Control Electronics
DCDC Converters
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching ensures more reliable
and robust end application
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH4011SPSQ)
Mechanical Data
Case: PowerDI5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Pin1
SD
SD
SD
GD
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMNH4011SPS-13
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
NH4011SS
YY WW
= Manufacturer’s Marking
NH4011SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
SS SG
POWERDI is a registered trademark of Diodes Incorporated.
DMNH4011SPS
Document number: DS37401 Rev. 2 - 2
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated



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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS = 10V) (Note 6)
TA = +25C
TA = +70C
Continuous Drain Current (VGS = 10V) (Note 7)
TC = +25C
TC = +100°C
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current, L = 1mH (Note 8)
Avalanche Energy, L = 1mH (Note 8)
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMNH4011SPS
Value
40
±20
13
10.8
80
57
80
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
TC = +25°C
Symbol
PD
RJA
PD
RJA
PD
RJC
TJ, TSTG
Value
1.5
99
-55 to +175
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
2
Typ
8.5
0.9
1405
247
108
2.2
25.5
4.6
6.9
4.6
3.7
16
5.1
22.1
13.4
Max
1
±100
4
10
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 40V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 20A
V VGS = 0V, IS = 20A
pF VDS = 20V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 20V, VGS = 10V, ID = 50A
ns
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3.5Ω
ns
nC
IF = 50A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMNH4011SPS
Document number: DS37401 Rev. 2 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated



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50.0
40.0
30.0
VGS = 4.5V
VGS = 5.0V
VGS = 6.0V
VGS = 10.0V
VGS = 4.0V
20.0
10.0
0.0
0
VGS = 3.5V
VGS = 3.0V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3
30
VDS = 5V
25
DMNH4011SPS
20
15
10
5
0
1.5
175
150
125
85
25
-55
2 2.5 3 3.5 4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
4.5
10.00
20
9.50
9.00
8.50
8.00
7.50
VGS = 10.0V
17 ID = 50A
14 ID = 20A
11
7.00
8
6.50
6.00
5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs Drain Current and
Gate Voltage
5
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
0.02
0.018
VGS = 10V 175
150
0.016
0.014
0.012
0.01
0.008
0.006
125
85
25
0.004
0.002
-55
0
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs Drain Current
and Temperature
2.2
2
1.8
1.6
1.4 VGS = 10V, ID = 50A
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMNH4011SPS
Document number: DS37401 Rev. 2 - 2
3 of 7
www.diodes.com
April 2016
© Diodes Incorporated



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0.02
0.018
0.016
0.014
0.012
VGS = 10V, ID = 50A
0.01
0.008
0.006
0.004
0.002
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7 On-Resistance Variation with Temperature
50
43
36
29
22 TA = 175
15 TA = 150
TA = 125
8
1
TA = 85
TA = 25
TA = -55
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs Current
10
8
DMNH4011SPS
3
2.8
2.6
2.4
2.2 ID = 1mA
2
1.8
1.6 ID = 250µA
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 8 Gate Threshold Variation vs
Temperature
10000
f = 1MHz
1000
Ciss
Coss
100
Crss
10
0
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
100
RDS(ON)
Limited
10
6
4
VDS = 20V, ID = 50A
2
0
0 3 6 9 12 15 18 21 24 27
Qg (nC)
Figure 11 Gate Charge
DC
1 PW = 100s
0.1
0.01
PW = 10s
PW = 1s
TJ(Max) = 175
TA = 25
VGS = 10V
PW = 100ms
PW =10ms
Single Pulse
PW = 1ms
DUT on 1*MRP Board
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated.
DMNH4011SPS
Document number: DS37401 Rev. 2 - 2
4 of 7
www.diodes.com
April 2016
© Diodes Incorporated



DMNH4011SPS datasheet pdf
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