DIM200MBS12-A000 Datasheet PDF - Dynex Semiconductor


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DIM200MBS12-A000
Dynex Semiconductor

Part Number DIM200MBS12-A000
Description Bi-directional Switch Igbt Module
Page 10 Pages

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DIM200MBS12-A000
Replaces issue May 2002, version DS5543-1.3
FEATURES
s 10µs Short Circuit Withstand
s Non Punch Through Silicon
s Isolated Copper Baseplate
DIM200MBS12-A000
IGBT Bi-Directional Switch Module
Preliminary Information
DS5545-2.1 June 2002
KEY PARAMETERS
VDRM
VT
IC
IC(PK)
(typ)
(max)
(max)
±1200V
4.3V
200A
400A
APPLICATIONS
s Matrix Converters
s Brushless Motor Controllers
s Frequency Converters
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MBS12-A000 is a bi-directional 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
7(E2)
6(G2)
11(C2)
1(C2)
2(E1E2)
3(C1)
9(C1)
4(G1)
5(E1)
Fig. 1 Bi-directional switch circuit diagram
ORDERING INFORMATION
Order As:
DIM200MBS12-A000
Note: When ordering, please use the whole part number.
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200MBS12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VDRM
Collector-emitter voltage
VGE = 0V
(measured across terminals 2 and 3)
VGES
I
C
IC(PK)
Pmax
I2t
V
isol
QPD
Gate-emitter voltage
-
Continuous collector current
Tcase = 80˚C
Peak collector current
1ms, Tcase = 115˚C
Max. transistor power dissipation
T = 25˚C, T = 150˚C
case
j
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
Max. Units
1200 V
±20 V
200 A
400 A
1435 W
6.25 kA2s
2500 V
10 PC
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200MBS12-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Al2O3
Cu
Creepage distance:
22mm
Clearance:
12mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
Rth(j-c)
Thermal resistance - transistor (per arm)
Rth(j-c)
Thermal resistance - diode (per arm)
Rth(c-h)
Tj
Thermal resistance - case to heatsink
(per module)
Junction temperature
T Storage temperature range
stg
- Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Min. Typ. Max. Units
- - 87 ˚C/kW
- - 194 ˚C/kW
- - 15 ˚C/kW
- - 150 ˚C
- - 125 ˚C
–40 - 125 ˚C
- - 5 Nm
- - 2 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200MBS12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
I
CES
IGES
VGE(TH)
V
CE(sat)
VT
IF
IFM
VF†
Cies
LM
RINT
SC
Data
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
On-state voltage
(measured across terminals 2 and 3)
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. ISC
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
V
GE
=
±20V,
V
CE
=
0V
IC = 10mA, VGE = VCE
VGE = 15V, IC = 200A
VGE = 15V, IC = 200A, , Tcase = 125˚C
V = 15V, I = 200A
GE C
VGE = 15V, IC = 200A, Tcase = 125˚C
DC
tp = 1ms
IF = 200A
IF = 200A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
-
Tj = 125˚C, VCC = 900V,
I1
tp 10µs, VCE(max) = VCES – L*. di/dt I2
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + LM
Min. Typ. Max. Units
- - 0.25 mA
- - 6 mA
- - 1 µA
4.5 5.5 6.5 V
-
2.2 2.6
V
-
2.6 3.0
V
-
4.3 5.0
V
-
4.7 5.4
V
- - 200 A
- - 400 A
-
2.1 2.4
V
-
2.1 2.4
V
- 23 - nF
- 30 - nH
- 0.27 - m
1375
-
A
1125
-
A
4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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