DD100N16S Datasheet PDF - Infineon


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DD100N16S
Infineon

Part Number DD100N16S
Description Rectifier Diode Module
Page 10 Pages

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Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DD100N16S
Key Parameters
VDRM / VRRM
IFAVM
IFSM
VT0
rT
RthJC
Base plate
Weight
1600 V
130 A (TC=100 °C)
32557000AA(TC=55°C)
0,87 V
2,54 mΩ
0,19 K/W
20 mm
75 g
Merkmale
Löt-Löt Technologie
Industrie-Standard-Gehäuse
Elektrisch isolierte Bodenplatte
Typische Anwendungen
Gleichrichter für Antriebsapplikationen
Gleichrichter für UPS
Batterieladegleichrichter
For type designation please refer to actual
short form catalog
http://www.ifbip.com/catalog
Features
Solder-Solder Technology
Industrial standard package
Electrically insulated base plate
Typical Applications
Rectifier for drives applications
Rectifiers for UPS
Battery chargers
content of customer DMX code
type designation
serial number
internal production order number
material number
date code (YY/WW)
add on for date code
DMX code
digit
1..18
19..23
24..31
32..41
42..45
46
DMX code
digit quantity
18
5
8
10
4
1
Date of Publication 2014-08-15
Revision 3.1
12
3
www.ifbip.com
support@infineon-bip.com
Seite/page: 1/10



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Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DD100N16S
DD100N16S
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Tvj = -40°C... Tvj max
Tvj = +25°C... Tvj max
TC = 100 °C
Tvj = 25°C, tP = 10ms
Tvj = Tvj max, tP = 10ms
Tvj = 25°C, tP = 10ms
Tvj = Tvj max, tP = 10ms
VRRM
VRSM
IFRMSM
IFAVM
IFSM
I²t
1600 V
1700 V
210 A
134 A
2500 A
2000 A
31250 A²s
20000 A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Tvj = 25°C iF = 300A
Tvj = Tvj max
Tvj = Tvj max
Tvj = Tvj max , vR = VRRM
RMS, f = 50Hz, t = 1 sec
RMS, f = 50Hz, t = 1 min
vF
V(TO)
rT
iR
VISOL
max.
1,6 V
max.
max.
0,87 V
2,45 mΩ
max.
3 mA
3,6 kV
3,0 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
pro Modul / per Module, Θ = 180° sin
pro Zweig / per arm, Θ = 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
pro Modul / per Module
pro Zweig / per arm
RthJC
RthCH
Tvj max
Tc op
Tstg
max.
max.
max.
max.
max.
max.
0,100 K/W
0,200 K/W
0,095 K/W
0,190 K/W
0,11 K/W
0,22 K/W
130 °C
- 40...+125 °C
- 40...+125 °C
prepared by: Je
approved by: ML
Date of Publication 2014-08-15
date of publication: 2014-08-15
revision:
3.1
Revision 3.1
Seite/page: 2/10



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Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DD100N16S
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see annex
Innere Isolation
internal insulation
Anzugsdrehmoment für mechanische Anschlüsse
mounting torque
Anzugsdrehmoment für elektrische Anschlüsse
terminal connection torque
Gewicht
weight
Kriechstrecke
creepage distance
Schwingfestigkeit
vibration resistance
Basisisolierung (Schutzklasse 1, EN 61140)
Basic insulation (class 1, IEC 61140)
Toleranz ±15%
M1
Toleranz ±15%
M2
G
f = 50Hz
file-No.
Seite 4
page 4
Al2O3
5 Nm
3 Nm
typ. 75 g
mm
50 m/s²
E 83335
Date of Publication 2014-08-15
Revision 3.1
Seite/page: 3/10



No Preview Available !

Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DD100N16S
12
3
DD
Date of Publication 2014-08-15
Revision 3.1
Seite/page: 4/10




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