D467 Datasheet PDF - Hitachi


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D467
Hitachi

Part Number D467
Description 2SD467
Page 6 Pages

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2SD467
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SB561
Outline
TO-92 (1)
3
2
1
www.DataSheet.co.kr
1. Emitter
2. Collector
3. Base
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2SD467
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
Ratings
25
20
5
0.7
1.0
0.5
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
25
Collector to emitter breakdown V(BR)CEO
voltage
20
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
DC current transfer ratio
I CBO
hFE*1
85
Typ Max
——
——
——
www.DataSheet.co.kr
1.0
— 240
Collector to emitter saturation
voltage
Base to emitter voltage
VCE(sat)
VBE
0.19 0.5
0.76 1.0
Gain bandwidth product
fT
— 280 —
Collector output capacitance Cob — 12
Note: 1. The 2SD467 is grouped by hFE as follows.
BC
85 to170
120 to 240
Unit
V
V
V
µA
V
V
MHz
pF
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE =
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 1 V, IC = 0.15 A
(Pulse test)
IC = 0.5 A, IB = 0.05 A
(Pulse test)
VCE = 1 V, IC = 0.15 A
(Pulse test)
VCE = 1 V, IC = 0.15 A
(Pulse test)
VCB = 10 V, IE = 0, f = 1 MHz
2
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Maximum Collector Dissipation Curve
0.6
0.4
0.2
0 50 100 150
Ambient Temperature Ta (°C)
2SD467
Typical Output Characteristics
500
2.5
400 2.0
300 1.5
1.0
200
0.5 mA
100
IB = 0
0 0.4 0.8 1.2 1.6 2.0
Collector to Emitter Voltage VCE (V)
1,000
300
Typical Transfer Characteristics
VCE = 1 V
100
30
Ta = 75°C 25°C
10
3
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
5,000
2,000
1,000
500
www.DataSheet.co.kr
200
100
50
20
10
5
1
DC Current Transfer Ratio vs.
Collector Current
VCE = 1 V
Pulse
Ta = 75°C
25°C
3 10 30 100 300 1,000
Collector Current IC (mA)
3Datasheet pdf - http://www.DataSheet4U.net/



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2SD467
Collector to Emitter Saturation
Voltage vs. Collector Current
0.5
IC = 10 IB
0.4
0.3
0.2
Ta = 75°C 25°C
0.1
0
1 3 10 30 100 300 1,000
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
400
VCE = 1 V
300
200
100
0
10 20
50 100 200 500 1,000
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
500
f = 1 MHz
200 IE = 0
100
50
www.DataSheet.co.kr
20
10
5
0.5 1.0 2
5 10 20 50
Collector to Base Voltage VCB (V)
4
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