D30N40 Datasheet PDF - Alpha & Omega Semiconductors

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D30N40
Alpha & Omega Semiconductors

Part Number D30N40
Description AOD30N40
Page 6 Pages


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AOD3N40
400V,2.6A N-Channel MOSFET
General Description
Product Summary
The AOD3N40 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
500V@150
2.6A
< 3.1
Top View
TO252
DPAK
Bottom View
D
D
S
G
G
S
D
G
S
AOD3N40
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
VGS
ID
IDM (<80µs)
IDM (<20µs)
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
Maximum
400
±30
2.6
1.6
5.6
6.5
1.5
34
68
5
50
0.4
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
46
-
2.1
Maximum
55
0.5
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.2.0: May 2013
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AOD3N40
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1A
gFS Forward Transconductance
VDS=40V, ID=1A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
400
500
V
0.4 V/ oC
1
µA
10
±100 nΑ
3.4 4 4.5 V
2.5 3.1
1.7 S
0.8 1
V
2.6 A
5.6 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
145 186 225
15 26 37
1.2 2.1 4.1
2.2 4.4 6.6
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=320V, ID=2.6A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=200V, ID=2.6A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=2.6A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=2.6A,dI/dt=100A/µs,VDS=100V
3.3 4.2 5.1
1.2 1.7 2.1
0.5 1.0 1.5
14
10
18
8
110 140 170
0.5 0.64 0.8
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.5A, VDD=150V, RG=10, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: May 2013
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AOD3N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 10
-55°C
10V VDS=40V
4
3 7V
2 6V
1
VGS=5.5V
0
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
7
6
5 VGS=10V
4
3
2
1
01234
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1 125°C
25°C
0.1
2468
VGS(Volts)
Figure 2: Transfer Characteristics
3
10
2.5 VGS=10V
ID=1A
2
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2 1.0E+01
ID=30A
1.1
1.0E+0040
125°C
1.0E-01
1 125°
1.0E-02
25°C
0.9
25°
1.0E-03
0.8
-100 -50 0 50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
1.0E-04
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Rev.2.0: May 2013
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AOD3N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 1000
12
VDS=320V
ID=2.6A
9
100
Ciss
Coss
6
10
Crss
3
0
024
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
10
10µs
RDS(ON)
1 limited
100µs
1ms
10ms
0.1 DC 0.1s
TJ(Max)=150°C
TC=25°C
0.01
1 10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
1
0.1 1 10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
800
600 TJ(Max)=150°C
TC=25°C
400
200
0
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.000001
Single Pulse
PD
Ton
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
Rev.2.0: May 2013
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