D04S60 Datasheet PDF - Infineon Technologies

www.Datasheet-PDF.com

D04S60
Infineon Technologies

Part Number D04S60
Description SDD04S60
Page 9 Pages


D04S60 datasheet pdf
Download PDF
D04S60 pdf
View PDF for Mobile

No Preview Available !

www.DataSheet4U.com
Final data
SDP04S60, SDD04S60
SDT04S60
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
Ideal diode for Power Factor
Correction up to 800W 1)
No forward recovery
P-TO220-2-2.
Product Summary
VRRM
600
Qc 13
IF 4
V
nC
A
P-TO252-3-1.
P-TO220-3-1.
Type
SDP04S60
SDD04S60
SDT04S60
Package
P-TO220-3-1.
P-TO252-3-1.
P-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
Marking
D04S60
D04S60
D04S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFRM
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Pin 1
n.c.
n.c.
C
PIN 2
C
A
A
Value
4
5.6
12.5
18
40
0.78
600
600
36.5
-55... +175
PIN 3
A
C
Unit
A
A²s
V
W
°C
Page 1
2004-02-11



No Preview Available !

www.DataSheet4U.com
Thermal Characteristics
Parameter
Final data
Symbol
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
P-TO263-3-2: @ 6 cm2 cooling area 2)
P-TO252-3-1: @ min. footprint
P-TO252-3-1: @ 6 cm2 cooling area 2)
RthJC
RthJA
RthJA
SDP04S60, SDD04S60
SDT04S60
Values
Unit
min. typ. max.
- - 4.1 K/W
- - 62
- - 62
- 35 -
- - 75
- - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=4A, Tj=25°C
IF=4A, Tj=150°C
Reverse current
VR=600V, Tj=25°C
VR=600V, Tj=150°C
VF V
- 1.7 1.9
- 2 2.4
IR µA
- 15 200
- 40 1000
1CCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, IIN = 30%
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2004-02-11



No Preview Available !

www.DataSheet4U.com
Final data
SDP04S60, SDD04S60
SDT04S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Total capacitive charge
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Total capacitance
Qc - 13 - nC
trr - n.a. - ns
C pF
VR=0V, TC=25°C, f=1MHz
VR=300V, TC=25°C, f=1MHz
VR=600V, TC=25°C, f=1MHz
- 150 -
- 10 -
-7-
Page 3
2004-02-11



No Preview Available !

www.DataSheet4U.com
1 Power dissipation
Ptot = f (TC)
40
W
Final data
SDP04S60, SDD04S60
SDT04S60
2 Diode forward current
IF= f (TC)
parameter: Tj175 °C
4.5
A
3.5
30
3
25
2.5
20
2
15
1.5
10
1
5 0.5
00 20 40 60 80 100 120 140 °C 180
TC
3 Typ. forward characteristic
IF = f (VF)
parameter: Tj , tp = 350 µs
8
A
-40°C
25°C
6 100°C
125°C
150°C
5
4
3
2
1
00 20 40 60 80 100 120 140 °C 180
TC
4 Typ. forward power dissipation vs.
average forward current
PF(AV)=f(IF) TC=100°C, d = tp/T
18
W
14
12
10
8
6
d=0.1
4 d=0.2
d=0.5
2 d=1
00 0.5 1 1.5 2 2.5 V 3.5
VF
Page 4
00 1 2 3 4 5 A 7
IF(AV)
2004-02-11



D04S60 datasheet pdf
Download PDF
D04S60 pdf
View PDF for Mobile


Related : Start with D04S6 Part Numbers by
D04S60 SDD04S60 D04S60
Infineon Technologies
D04S60 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact