CY62128BN Datasheet PDF - Cypress Semiconductor

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CY62128BN
Cypress Semiconductor

Part Number CY62128BN
Description 1-Mbit (128K x 8) Static RAM
Page 12 Pages


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CY62128BN
MoBL®
1-Mbit (128K x 8) Static RAM
Features
• Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
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• 4.5V–5.5V operation
• CMOS for optimum speed/power
• Low active power
(70 ns Commercial, Industrial, Automotive-A)
— 82.5 mW (max.) (15 mA)
• Low standby power
(55/70 ns Commercial, Industrial, Automotive-A)
— 110 µW (max.) (15 µA)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and OE options
• Available in Pb-free and non-Pb-free 32-pin (450
mil-wide) SOIC, 32-pin STSOP and 32-pin TSOP-I
Functional Description[1]
The CY62128BN is a high-performance CMOS static RAM
organized as 128K words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE1), an active
HIGH Chip Enable (CE2), an active LOW Output Enable (OE),
and tri-state drivers. This device has an automatic
power-down feature that reduces power consumption by more
than 75% when deselected.
Writing to the device is accomplished by taking Chip Enable
One (CE1) and Write Enable (WE) inputs LOW and Chip
Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0
through I/O7) is then written into the location specified on the
address pins (A0 through A16).
Reading from the device is accomplished by taking Chip
Enable One (CE1) and Output Enable (OE) LOW while forcing
Write Enable (WE) and Chip Enable Two (CE2) HIGH. Under
these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW, CE2 HIGH, and WE LOW).
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
CCEE12
WE
OE
INPUT BUFFER
128K x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
Pin Configuration
Top View
SOIC
NC 1
32 VCC
A16 2
31 A15
A14 3
30 CE2
I/O 0
A12 4
29 WE
A7 5
28 A13
I/O 1
A6 6
27 A8
A5 7
26 A9
I/O 2
A4 8
25 A11
A3 9
24 OE
I/O 3
A2 10
23 A10
A1 11
22 CE1
I/O 4
A0 12
21 I/O7
I/O0 13
20 I/O6
I/O 5
I/O1 14
19 I/O5
I/O2 15
18 I/O4
I/O 6
GGgGNnNcD 16
17 I/O3
I/O 7
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-06498 Rev. *A
Revised August 3, 2006
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Product Portfolio
Product
CY62128BNLL Commercial
Industrial
Automotive-A
Automotive-E
www.DataSheet4U.com
Pin Configurations
Min.
4.5
VCC Range (V)
Typ.[2]
Max.
5.0 5.5
CY62128BN
MoBL®
Speed
(ns)
55
70
55
70
70
70
Power Dissipation
Operating, ICC (mA) Standby, ISB2 (µA)
Typ.[2]
Max.
Typ.[2] Max.
7.5 20 2.5 15
6 15 2.5 15
7.5 20 2.5 15
6 15 2.5 15
6 15 2.5 15
6 25 2.5 25
A11
AA89
A13
WE
25
26
27
28
29
CE2
A15
VCC
30
31
32
NC 1
A16 2
AAA11427
3
4
5
A6 6
A5
A4
7
8
STSOP
Top View
(not to scale)
24 OE
23
22
21
20
19
18
17
16
ICA/O1E071
II//OO56
II//OO43
GND
15
14
II//OO21
13
12
IA/O0 0
11
10
9
AAA132
AAAA111389
WE
1
2
3
4
5
CAE152
VNCCC
6
7
8
9
A16 10
AAA11427
11
12
13
A6
AA45
14
15
16
TSOP I
Top View
(not to scale)
32 OE
31
30
29
28
27
26
25
24
AIC/O1E071
GIIII////OOOON4536D
23
22
21
20
19
18
17
IIIAAAA///OOO1032 210
Pin Definitions
Input
Input/Output
Input/Control
A0–A16. Address Inputs
I/O0–I/O7. Data lines. Used as input or output lines depending on operation
WE. Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is
conducted.
Input/Control
Input/Control
Input/Control
CE1. Chip Enable 1, Active LOW.
CE2. Chip Enable 2, Active HIGH.
OE. Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as
outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins
Ground
GND. Ground for the device
Power Supply VCC. Power supply for the device
Note:
2. Typical values are included for reference only and are not tested or guaranteed. Typical values are an average of the distribution across normal production
variations as measured at VCC = 5.0V, TA = 25°C, and tAA = 70 ns.
Document #: 001-06498 Rev. *A
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CY62128BN
MoBL®
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND[3] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State[3] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[3].................................–0.5V to VCC + 0.5V
Current into Outputs (LOW) .........................................20 mA
www.DataSheetE4Ule.ccotmrical Characteristics Over the Operating Range
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Automotive-A
Automotive-E
Ambient
Temperature (TA)[4]
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
–40°C to +125°C
VCC
5V ± 10%
Parameter
VOH
VOL
VIH
Description
Output HIGH
Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
VCC = Min., IOH = –1.0 mA
VCC = Min., IOL = 2.1 mA
VIL Input LOW Voltage[3]
IIX
Input Leakage
GND VI VCC
Commercial/
Current
Industrial
Automotive-A
Automotive-E
IOZ
Output Leakage
GND VI VCC,
Commercial/
Current
Output Disabled
Industrial
Automotive-A
Automotive-E
ICC
VCC Operating
VCC = Max.,
Commercial/
Supply Current
IOUT = 0 mA,
Industrial
f = fMAX = 1/tRC
Automotive-A
Automotive-E
ISB1
Automatic CE
Max. VCC, CE1 VIH Commercial/
Power-down Current or CE2 < VIL,
Industrial
—TTL Inputs
VIN VIH or
VIN VIL, f = fMAX
Automotive-A
Automotive-E
ISB2
Automatic CE
Max. VCC,
Power-down Current CE1 VCC – 0.3V,
—CMOS Inputs
or CE2 0.3V,
VIN VCC – 0.3V,
or VIN 0.3V, f = 0
Notes:
3. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
4. TA is the “Instant On” case temperature.
Commercial/
Industrial
Automotive-A
Automotive-E
Min.
2.4
2.2
–0.3
–1
–1
-55
Typ.[2]
7.5
0.1
2.5
Max.
0.4
VCC
+ 0.3
0.8
+1
+1
20
2
15
Min.
2.4
2.2
–0.3
–1
–1
–10
–1
–1
–10
-70
Typ.[2]
6
6
6
0.1
0.1
0.1
2.5
2.5
2.5
Max.
0.4
VCC
+ 0.3
0.8
+1
+1
+10
+1
+1
+10
15
15
25
1
1
2
15
15
25
Unit
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
µA
µA
µA
Document #: 001-06498 Rev. *A
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CY62128BN
MoBL®
Capacitance[5]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Thermal Resistance[5]
Parameter
Description
Test Conditions
ΘJA
ΘJC
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA / JESD51.
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AC Test Loads and Waveforms
32 SOIC
66.17
30.87
Max.
9
9
32 STSOP
105.14
14.09
Unit
pF
pF
32 TSOP Unit
97.44 °C/W
26.05 °C/W
R1 1800
5V
R1 1800
5V
OUTPUT
100 pF
INCLUDING
JIG AND
SCOPE
(a)
OUTPUT
R2
990
5 pF
INCLUDING
JIG AND
SCOPE
(b)
R2
990
VCC
GND
Rise TIme:
1 V/ns
ALL INPUT PULSES
90%
10%
90%
10%
Fall TIme:
1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
639
1.77V
Data Retention Waveform
VCC
CE1
or
CE2
VCC, min.
tCDR
DATA RETENTION MODE
VDR > 2V
VCC, min.
tR
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions[6]
VDR
ICCDR
VCC for Data Retention
Data Retention Current
VCC = VDR = 2.0V,
CE1 VCC – 0.3V, or CE2 0.3V,
VIN VCC – 0.3V or, VIN 0.3V
tCDR
Chip Deselect to Data
Retention Time
tR Operation Recovery Time
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed VCC + 0.5V.
Commercial/
Industrial
Automotive-A
Automotive-E
Min.
2.0
Typ.
1.5
Max.
15
Unit
V
µA
1.5 25 µA
0 ns
70 ns
Document #: 001-06498 Rev. *A
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