CM1244 Datasheet PDF - ON Semiconductor

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CM1244
ON Semiconductor

Part Number CM1244
Description 4-Channel ESD Array
Page 7 Pages


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4-Channel ESD Array in CSP
CM1244
Features
• Four channels of ESD protection
±15kV ESD protection on each channel
(IEC 61000-4-2 Level 4, contact discharge)
±30kV ESD protection on each channel (HBM)
• Chip Scale Package features extremely low
lead inductance for optimum ESD protection
• 5-bump, 0.760mm x 1.053mm footprint,
0.4mm pitch, Chip Scale Package (CSP)
• Lead-free
OptiGuardTM coating for improved reliability at
assembly
Block Diagram
Applications
• ESD protection for sensitive electronic equip-
ment
• I/O port and keypad and button circuitry
protection for portable devices
• Can be used for EMI filtering when combined
with external series resistance
• Wireless handsets
• Handheld PCs/PDAs
• MP3 Players
• Digital Camcorders
• Notebooks
• Desktop PCs
©2010 SCILLC. All rights reserved.
April 2010 – Rev. 3
Publication Order Number:
CM1244/D



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PIN DESCRIPTIONS
PIN
NAME
DESCRIPTION
A1
ESD_1
ESD Channel1
A3
ESD_2
ESD Channel 2
B2
GND
Device Ground
C1
ESD_3
ESD Channel 3
C3
ESD_4
ESD Channel 4
Ordering Information
PART NUMBERING INFORMATION
Bumps
5
Package
CSP
Lead-free Finish
Ordering Part Number1
CM1244-04CP
Part Marking
04
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Rev.3 | Page 2 of 7 | www.onsemi.com



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Specifications
PARAMETER
Storage Temperature Range
DC Package Power Rating
ABSOLUTE MAXIMUM RATINGS
RATING
-65 to +150
200
UNITS
°C
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
–40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS1
SYMBOL PARAMETER
VDIODE Diode Reverse Breakdown Voltage
ILEAK Diode Leakage Current
VSIG Signal Voltage
Positive Clamp
Negative Clamp
CONDITIONS
IDIODE = 10µA
VIN=3.3V, TA=25°C
IDIODE = 10mA
VESD In-system ESD Withstand Voltage
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
VCL Clamping Voltage during ESD Discharge Note 2
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
CDIODE Diode Capacitance
At 2.5VDC Reverse Bias,
1MHz, 30mVAC
MIN TYP
5.5
5.6 6.8
–1.5 –0.8
±30
±15
+15
–8
22 27
MAX
100
9.0
-0.4
32
UNITS
V
nA
V
V
kV
kV
V
V
pF
Note 1: TA = –40 to +85°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Rev. 3 | Page 3 of 7 | www.onsemi.com



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Application Information
Refer to Application Note AP-217, “The Chip Scale Package,” for a detailed description of Chip Scale Packages
offered by California Micro Devices.
Performance Information
Diode Characteristics (nominal conditions unless specified otherwise)
Figure 1. Typical Diode Capacitance VS. Input Voltage (normalized to 2.5VDC)
Figure 2. Frequency Response (single channel vs. GND, in 50system)
Rev.3 | Page 4 of 7 | www.onsemi.com



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