CEM3501L Datasheet PDF - CET


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CEM3501L
CET

Part Number CEM3501L
Description P-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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CEM3501L
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -5A, RDS(ON) = 65m@VGS = -10V.
RDS(ON) = 75m@VGS = -4.5V.
RDS(ON) = 100m@VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID -5
IDM -20
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now
Specification and data are subject to change without notice .
1
Rev 1. 2012.Mar
http://www.cetsemi.com



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CEM3501L
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
-30
-1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA -0.4
-1 V
VGS = -10V, ID = -3A
52 65 m
VGS = -4.5V, ID = -2A
60 75 m
VDS = -2.5V, ID = -1A
75 100 m
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
650
85
60
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -5A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
9 18 ns
3 6 ns
27 54 ns
7 14 ns
7 9 nC
0.9 nC
2.3 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -2.1A
-2.1 A
-1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5
2



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5
-VGS=10,8,6,2V
4
3
2
1
0
0.0 1.0 2.0 3.0 4.0 5.0
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750
Ciss
600
450
300
150 Coss
0 Crss
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEM3501L
10
25 C
8
6
4
2
TJ=125 C
-55 C
0
0 0.5 1.0 1.5 2.0 2.5 3
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-3A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current



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5 VDS=-15V
4 ID=-5A
3
2
1
0
0 1.5 3.0 4.5 6.0 7.5 9.0
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
CEM3501L
102
RDS(ON)Limit
101
100
10ms
100ms
1s
DC
10-1
TA=25 C
TJ=150 C
10-2 Single Pulse
10-2 10-1 100 101 102
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
100
10-1
10-2
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
101
102
Figure 11. Normalized Thermal Transient Impedance Curve
4




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