CEM2163 Datasheet PDF - CET


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CEM2163
CET

Part Number CEM2163
Description P-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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CEM2163
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -8.9A, RDS(ON) = 20m@VGS = -4.5V.
RDS(ON) = 30m@VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -20
VGS ±12
ID -8.9
IDM -36
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
1
Rev 1. 2010.Oct
http://www.cet-mos.com



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CEM2163
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -12V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -4.5V, ID = -7.6A
VGS = -2.5V, ID = -6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -6V, ID = -1A,
VGS = -4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -6V, ID = -7A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-20
-0.4
Typ
15
22
2805
505
395
20
18
89
49
31.5
3.8
8.8
Max Units
-1
100
-100
V
µA
nA
nA
-1.3 V
20 m
30 m
pF
pF
pF
40 ns
36 ns
178 ns
98 ns
41 nC
nC
nC
-2 A
-1.2 V
2



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5
-VGS=4.5,4,3.5,1.5V
4
3
2
1 -VGS=1V
0
0.0 0.25 0.5 0.75
1 1.25 1.5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
3600
3000
Ciss
2400
1800
1200
600 Coss
0 Crss
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEM2163
15
25 C
12
9
6
3 TJ=125 C
-55 C
0
0 0.5 1 1.5 2 2.5 3
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-7.6A
1.9 VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current



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5 VDS=-6V
ID=-7.6A
4
3
2
1
0
0 7 14 21 28 35 42
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
RL
VIN
D VOUT
VGS
RGEN G
S
CEM2163
102
RDS(ON)Limit
101
100
10ms
100ms
1s
DC
10-1
TA=25 C
TJ=150 C
Single Pulse
10-2 10-2 10-1 100 101 102
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
100
D=0.5
10-1
10-2
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
101
102
Figure 11. Normalized Thermal Transient Impedance Curve
4




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