CEK01N7 Datasheet PDF - CET


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CEK01N7
CET

Part Number CEK01N7
Description N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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CEK01N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 0.3A, RDS(ON) = 18 @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S
TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 700
VGS ±30
Drain Current-Continuous
Drain Current-Pulsed a
ID 0.3
IDM 1.2
Maximum Power Dissipation
PD 3.1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Leadb
Symbol
RθJL
Limit
40
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2010.June.
http://www.cet-mos.com



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CEK01N7
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.2A
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS b
Ciss
Coss
Crss
VDS = 20V, ID = 0.3A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 0.3A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 0.3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 0.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
700
2
Typ
14.5
0.5
170
60
30
10
11
24
62
10
0.6
7.5
Max Units
1
100
-100
V
µA
nA
nA
4V
18
S
pF
pF
pF
20 ns
22 ns
48 ns
124 ns
12.8 nC
nC
nC
0.3 A
1.6 V
6
2



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1.5
VGS=10,9,8V
1.2
VGS=6V
0.9
0.6
0.3
VGS=5V
0.0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
240
200
Ciss
160
120
80
Coss
40
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEK01N7
0.5
25 C
0.4
0.3
0.2
0.1
TJ=125 C
-55 C
0.0
1234567
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0 ID=0.2A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
100
10-1
10-2
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current



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10 VDS=480V
ID=0.3A
8
6
4
2
0
0 2 4 6 8 10 12
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
CEK01N7
101
RDS(ON)Limit
100 1ms
10ms
10-1
100ms
1s
DC
10-2
TA=25 C
TJ=150 C
10-3
Single
100
Pulse
101
102
103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
6
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
100
D=0.5
10-1
10-2
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
101
102
Figure 11. Normalized Thermal Transient Impedance Curve
4




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