CEH8205 Datasheet PDF - CET


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CEH8205
CET

Part Number CEH8205
Description N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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CEH8205
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , RDS(ON) TYP = 25 m@VGS = 4.5V.
RDS(ON) TYP = 30m@VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
Halogen free.
4
5
6
3
2
1
TSOP-6
G1(6)
D1(2)
G2(4)
S1(1)
D2(5)
S2(3)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 5.2
IDM 20
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
110
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2010.MAY
http://www.cet-mos.com



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CEH8205
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 3.5A
VDS = 5V, ID = 5.2A
VDS = 10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 5.2A,
VGS = 5V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 5.2A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 5.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
20
0.5
21.5
Typ
25
30
17
835
125
95
10.7
3.8
25.3
2.8
8.2
1.0
1.9
Max Units
1
100
-100
V
µA
nA
nA
1.0 V
30 m
40 m
S
pF
pF
pF
27 ns
10 ns
63 ns
7 ns
nC
nC
nC
5.2 A
1.2 V
2



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5
VGS=4.5,3.5,2.5V
VGS=2.0V
4
3
2
1
VGS=1.5V
0
0 0.3 0.6 0.9
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
1000
750
Ciss
500
250
0 Crss
Coss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEH8205
10
25 C
8
6
4
2 TJ=125 C
-55 C
0
0 0.5 1.0 1.5 2.0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1.8 ID=5.2
1.6 VGS=4.5V
1.4
1.2
1.0
0.8
0.6
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current



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5 VDS=10V
ID=5.2A
4
3
2
1
0
0 3 6 9 12
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
Figure 9. Switching Test Circuit
CEH8205
102
RDS(ON)Limit
101
100
1ms
10ms
100ms
DC
10-1
TA=25 C
TJ=150 C
Single Pulse
10-2 10-2 10-1 100 101 102
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 10. Switching Waveforms
2
100
D=0.5
10-1
0.2
0.1
0.05
10-2
10-4
0.02
Single Pulse
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
101
102
Figure 11. Normalized Thermal Transient Impedance Curve
4




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