CEH2608 Datasheet PDF - CET


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CEH2608
CET

Part Number CEH2608
Description Dual Enhancement Mode Field Effect Transistor
Page 4 Pages

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CEH2608
Dual Enhancement Mode Field Effect Transistor (N Channel)
PRELIMINARY
FEATURES
20V, 3.8A, RDS(ON) = 50m@VGS = 4.5V.
RDS(ON) = 70m@VGS = 2.5V.
RDS(ON) = 100m@VGS = 1.8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
4
5
6
3
2
1
TSOP-6
G1(1)
D1(6)
G2(3)
S1(5)
D2(4)
S2(2)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 20
VGS ±12
ID 3.8
IDM 15.2
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
110
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.May
http://www.cetsemi.com



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CEH2608
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Symbol
Test Condition
Min Typ Max Units
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 3.8A
VGS = 2.5V, ID = 3.0A
VGS = 1.8V, ID = 2.0A
0.4
1
100
-100
V
µA
nA
nA
1.2 V
30 50 m
40 70 m
60 100 m
Dynamic Characteristics d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 3.5A,
VGS = 4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 3.5A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1A
330 pF
90 pF
60 pF
10 20 ns
6 12 ns
28 56 ns
15 30 ns
5 nC
1.0 nC
1.5 nC
1A
1.1 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2



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N-CHANNEL
10
VGS=4.5,3.5,2.5V
8
6
VGS=2.0V
4
2
VGS=1.5V
0
0123
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
600
500
400
Ciss
300
200
100 Coss
0 Crss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
4
CEH2608
7.5
25 C
6
4.5
3
TJ=125 C
1.5
-55 C
0
0 1.0 2.0
3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1.8 ID=3.8
1.6 VGS=4.5V
1.4
1.2
1.0
0.8
0.6
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current



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5 VDS=10V
ID=3.5A
4
3
2
1
0
0123
45
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
CEH2608
102
101 RDS(ON)Limit
100
10ms
100ms
1s
DC
10-1
TA=25 C
TJ=150 C
10-2
Single
10-2
Pulse
10-1
100
101
102
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
100
D=0.5
10-1
10-2
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
101
102
Figure 11. Normalized Thermal Transient Impedance Curve
4




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