CEH2331 Datasheet PDF - Chino-Excel Technology

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CEH2331
Chino-Excel Technology

Part Number CEH2331
Description P-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages


CEH2331 datasheet pdf
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CEH2331
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -5.2A , RDS(ON) = 48m@VGS = -4.5V.
RDS(ON) = 60m@VGS = -2.5V.
RDS(ON) = 78m@VGS = -1.8V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G(3)
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID -5.2
IDM -21
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
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This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2010.Sep
http://www.cetsemi.com



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CEH2331
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current
On Characteristics
BVDSS
IDSS
IGSS
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±12V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = -4.5V, ID = -3.3A
VGS = -2.5V, ID = -2.8A
VGS = -1.8V, ID = -2A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
Ciss
Coss
Crss
VDS = -5V, ID = -4A
VDS = -10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -10V, ID = -4A,
VGS = -4.5V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -10V, ID = -4A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-20
-0.4
Typ Max Units
1
±100
V
µA
nA
-1 V
36 48 m
46 60 m
60 78 m
13 S
965 pF
200 pF
155 pF
15 30 ns
10 20 ns
40 80 ns
13 26 ns
13 17 nC
2.5 nC
3 nC
-5.2 A
-1.2 V
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15
12 -VGS=4.5,-4.0,-3.5V -VGS=2.5V
9
-VGS=2V
6
3
0
0 0.5
1 1.5
2 2.5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
Ciss
800
600
400
200
Crss
0
0
2
Coss
46
8 10
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
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0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEH2331
12
25 C
9
6
3
TJ=125 C
-55 C
0
0 0.5
1 1.5
2 2.5
3
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-3.3A
1.9 VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current



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5 VDS=-10V
ID=-4A
4
3
2
1
0
04
8 12 16
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
Figure 9. Switching Test Circuit
101
D=0.5
100 0.2
0.1
0.05
10-1
0.02
0.01
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Single Pulse
10-2
10-3
10-2
10-1
CEH2331
102
RDS(ON)Limit
101
100
1ms
10ms
100ms
DC
10-1
TA=25 C
TJ=150 C
10-2
Single
10-2
Pulse
10-1
100
101
102
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 10. Switching Waveforms
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
100 101 102 103
4



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