CEH2331 Datasheet PDF - Chino-Excel Technology

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CEH2331
Chino-Excel Technology

Part Number CEH2331
Description P-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages


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CEH2331
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -5.2A , RDS(ON) = 48m@VGS = -4.5V.
RDS(ON) = 60m@VGS = -2.5V.
RDS(ON) = 78m@VGS = -1.8V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G(3)
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID -5.2
IDM -21
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
www.DataSheet4U.com
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2010.Sep
http://www.cetsemi.com

CEH2331 datasheet pdf
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CEH2331 P-Channel Enhancement Mode Field Effect Transistor CEH2331
Chino-Excel Technology
CEH2331 pdf

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