CEF05N6 Datasheet PDF - CET


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CEF05N6
CET

Part Number CEF05N6
Description N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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CEF05N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 5A, RDS(ON) = 2.4@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220F full-pak for through hole.
D
G
D
S
CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
650
±30
5
20
35
0.28
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.6
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 3. 2009.Jun.
http://www.cet-mos.com



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CEF05N6
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
Min Typ Max Units
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2A
2.5
25
100
-100
V
µA
nA
nA
4.5 V
2 2.4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 40V, ID = 2A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 3A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 3A
19 S
555 pF
80 pF
15 pF
21 42 ns
10 20 ns
34 68 ns
13 26 ns
10 13.3 nC
2.4 nC
3.9 nC
5A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
4
2



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18
VGS=10,8,7V
15
12 VGS=5V
9
6
VGS=4V
3
0
0.0 20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
800
600 Ciss
400
200
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEF05N6
6
5
4
3
2
25 C
1 TJ=125C
-55 C
0
123456
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=2A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.7 1.0 1.3 1.7 2.0
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current



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10 VDS=480V
ID=3A
8
6
4
2
0
0 2 4 6 8 10
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
Figure 9. Switching Test Circuit
CEF05N6
102
4
101 RDS(ON)Limit
1ms
100
TC=25 C
TJ=175 C
10-1 Single Pulse
100 101
10ms
100ms
DC
102
103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 10. Switching Waveforms
100
D=0.5
10-1
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=See Datasheet
3. TJM-TC = P* R JC (t)
4. Duty Cycle, D=t1/t2
100
101
Figure 11. Normalized Thermal Transient Impedance Curve
4




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