CED4301 Datasheet PDF - CET


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CED4301
CET

Part Number CED4301
Description P-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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CED4301/CEU4301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -20A, RDS(ON) = 42m@VGS = -10V.
RDS(ON) = 65m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-40
±20
-20
-80
31
0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
4
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2010.Feb
http://www.cet-mos.com



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CED4301/CEU4301
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -32V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS b
Ciss
Coss
Crss
VGS = VDS, ID = -250µA
VGS = -10V, ID = -12A
VGS = -4.5V, ID = -8A
VDS = -5V, ID = -4.8A
VDS = -20V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -20V, ID = -5A,
VGS = -10V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -20V, ID = -5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-40
-1
Typ
32
50
12
1125
150
100
12
5
33
4
20
2.5
3.5
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
42 m
65 m
S
pF
pF
pF
24 ns
30 ns
66 ns
8 ns
26 nC
nC
nC
-20 A
-1.3 V
5
2



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25
-VGS=10,8,6V
20
-VGS=5.0V
15
10 -VGS=4.0V
5 -VGS=3.0V
0
012345
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
CED4301/CEU4301
35
28
21
14
7
TJ=125 C
0
01
25 C
2
-55 C
34
5
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1500
1250
1000
Ciss
750
500
250 Coss
0 Crss
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2 ID=-12A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3



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10 VDS=-20V
ID=-5A
8
6
4
2
0
0 4 8 12 16 20
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
CED4301/CEU4301
102
RDS(ON)Limit
101
100
1ms
10ms
100ms
DC
5
10-1
TC=25 C
TJ=150 C
10-2
Single
10-2
Pulse
10-1
100
101
102
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-2
Single Pulse
10-1
100 101 102
Square Wave Pulse Duration (msec)
PDM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=See Datasheet
3. TJM-TC = P* R JC (t)
4. Duty Cycle, D=t1/t2
103
104
Figure 11. Normalized Thermal Transient Impedance Curve
4




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