CEC8218 Datasheet PDF - CET


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CEC8218
CET

Part Number CEC8218
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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CEC8218
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 7A, RDS(ON) = 20m@VGS = 4.5V.
RDS(ON) = 28m@VGS = 2.5V.
RDS(ON) = 48m@VGS = 1.8V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
*1K
G1
*1K
G2
S1
*Typical value by design
5 67 8
Bottom View
DFN3*3
4 321
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 7
IDM 28
Maximum Power Dissipation
PD 1.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
D
S2
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
83
Units
C/W
Details are subject to change without notice .
1
Rev 3. 2015.Mar
http://www.cet-mos.com



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CEC8218
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4A
VGS = 1.8V, ID = 2A
Dynamic Characteristics d
Forward Transconductance
Switching Characteristics d
gFS VDS = 10V, ID = 5A
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 5A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
20
0.5
Typ
16
21
35
17
0.34
0.86
3.60
2
4.2
1.2
2.5
Max Units
V
1 µA
10 µA
-10 µA
1.2 V
20 m
28 m
48 m
S
0.68
1.72
7.5
4
5.6
µs
µs
µs
µs
nC
nC
nC
6.5 A
1.2 V
2



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25
VGS=4.5,4,3V
20
VGS=2.5V
15
10
VGS=2.0V
5
0
01234
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2.2 ID=5A
1.9 VGS=4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. On-Resistance Variation
with Temperature
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEC8218
15
25 C
12
9
6
3
TJ=125 C
-55 C
0
0.0 1 2 3 4 5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 4. Body Diode Forward Voltage
Variation with Source Current
102
RDS(ON)Limit
101
100
1ms
10ms
100ms
1s
DC
10-1
TA=25 C
TJ=150 C
Single Pulse
10-2 10-2 10-1 100 101
VDS, Drain-Source Voltage (V)
102
Figure 6. Maximum Safe
Operating Area



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5 VDS=10V
ID=5A
4
3
2
1
0
0123456
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
CEC8218
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 8. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
10-1
10-2
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
101
102
Figure 10. Normalized Thermal Transient Impedance Curve
4




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