C5703 Datasheet PDF - Toshiba Semiconductor

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C5703
Toshiba Semiconductor

Part Number C5703
Description 2SC5703
Page 5 Pages


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2SC5703
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5703
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
Industrial Applications
Unit: mm
High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
High-speed switching: tf = 55 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
(Note)
Tj
Tstg
100
80
50
7
4
7
400
800
1250
150
55 to 150
V
V
V
V
A
mA
mW
°C
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 100 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1.6 A
IC = 1.6 A, IB = 32 mA
IC = 1.6 A, IB = 32 mA
VCB = 10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC ∼− 30 V, RL = 19
IB1 = −IB2 = 53.3 mA
Min Typ. Max Unit
  100 nA
  100 nA
50  
V
400 1000
200
  0.12 V
  1.10 V
26 pF
45
700
ns
55
1 2001-12-17



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20 µs
IB1
Input
IB2
Duty cycle < 1%
IB1
IB2
VCC
Output
Figure 1 Switching Time Test Circuit &
Timing Chart
Marking
2SC5703
WA
2 2001-12-17



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5 Common emitter
Ta = 25°C
Single nonrepetitive
pulse
4
IC – VCE
60
50
40
30
20
3
10
25
2
1
IB = 1 mA
0
0 0.2 0.4 0.6
Collector-emitter voltage VCE (V)
VCE (sat) – IC
1 Common emitter
IC/IB = 50
Single nonrepetitive pulse
0.1
0.01
Ta = 100°C
55
25
0.001
0.001
0.01
0.1
1
Collector current IC (A)
10
2SC5703
10000
1000
100
hFE – IC
Ta = 100°C
25 55
10
Common emitter
VCE = 2 V
Single nonrepetitive pulse
1
0.001
0.01
0.1
1
Collector current IC (A)
10
VBE (sat) – IC
10
Common emitter
IC/IB = 50
Single nonrepetitive pulse
1 Ta = 100°C
25 55
0.1
0.001
0.01
0.1
1
Collector current IC (A)
10
IC – VBE
5
Common emitter
VCE = 2 V
Single nonrepetitive pulse
4
3
2
1
Ta = 100°C
25 55
0
0 0.4 0.8
Base-emitter voltage VBE (V)
1.2
3
2001-12-17



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2SC5703
1000
rth – tw
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
0.1 1 10 100 1000
Pulse width tw (s)
Safe Operating Area
10 IC max (pulsed) 10 ms1 ms100 µs10 µs
IC max (continuous)
100 ms*
1
10 s*
DC operation*
(Ta = 25°C)
: Single nonrepetitive pulse
0.1
Ta = 25°C
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
0.01 with increase in temperature.
0.1 1
10
Collector-emitter voltage VCE (V)
100
4 2001-12-17



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