C4881 Datasheet PDF - SavantIC

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C4881
SavantIC

Part Number C4881
Description 2SC4881
Page 4 Pages


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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4881
DESCRIPTION
·With TO-220F package
·Low saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
60
50
5
5
8
1
2.0
20
150
-55~150
UNIT
V
V
V
A
A
A
W



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4881
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.125A
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.125A
ICBO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCB=50V; IE=0
VEB=6V; IC=0
IC=1A ; VCE=1V
IC=2.5A ; VCE=1V
fT Transition frequency
IC=1A ; VCE=4V
COB Collector output capacitance
Switching times
IE=0; f=1MHz;VCB=10V
ton Turn-on time
ts Storage time
tf Fall time
IC=2.5A IB1=-IB2=0.125A
VCC=30V ,RL=12@
Duty cycleA1%
MIN TYP. MAX UNIT
50 V
0.4 V
1.3 V
1 µA
1 µA
100 320
60
100 MHz
45 pF
0.1 µs
0.8 µs
0.1 µs
2



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4881
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4881
4



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