BYV25FD-600 Datasheet PDF - NXP

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BYV25FD-600
NXP

Part Number BYV25FD-600
Description Enhanced ultrafast power diode
Page 12 Pages


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BYV25FD-600
Enhanced ultrafast power diode
Rev. 02 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast power diode in a SOT428 (DPAK) plastic package.
1.2 Features and benefits
High thermal cycling performance
Low on-state losses
Low thermal resistance
Soft recovery characteristic
Surface-mountable package
1.3 Applications
Dual Mode (DCM and CCM) PFC
Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VRRM
IF(AV)
repetitive peak
reverse voltage
average forward
current
square-wave pulse; δ = 0.5 ;
Tmb 121 °C; see Figure 1;
see Figure 2
Static characteristics
VF forward voltage IF = 5 A; Tj = 25 °C;
see Figure 5
IF = 5 A; Tj = 150 °C;
see Figure 5
Dynamic characteristics
trr reverse recovery IF = 1 A; VR = 30 V;
time dIF/dt = 100 A/µs; Tj = 25 °C;
see Figure 6
Min Typ Max Unit
- - 600 V
- - 5A
- 1.3 1.9 V
- 1.1 1.7 V
- 17.5 35 ns



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NXP Semiconductors
BYV25FD-600
Enhanced ultrafast power diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
n.c. not connected
K cathode[1]
A anode
K mounting base; cathode
Simplified outline
mb
2
13
SOT428 (DPAK)
[1] It is not possible to connect to pin 2 of the SOT428 package.
3. Ordering information
Graphic symbol
KA
001aaa020
Table 3. Ordering information
Type number
Package
Name
BYV25FD-600
DPAK
4. Limiting values
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
Tstg
Tj
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
DC
average forward current
square-wave pulse; δ = 0.5 ;
Tmb 121 °C; see Figure 1;
see Figure 2
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
square-wave pulse; δ = 0.5 ; tp = 25 µs;
Tmb 121 °C
tp = 10 ms; sine-wave pulse;
Tj(init) = 25 °C; see Figure 3
tp = 8.3 ms; sine-wave pulse;
Tj(init) = 25 °C; see Figure 3
junction temperature
Min Max Unit
- 600 V
- 600 V
- 600 V
- 5A
- 10 A
- 60 A
- 66 A
-40 150 °C
- 150 °C
BYV25FD-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 March 2011
© NXP B.V. 2011. All rights reserved.
2 of 12



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NXP Semiconductors
BYV25FD-600
Enhanced ultrafast power diode
14
Ptot
(W)
12
10
8
6
4
2
0
0
003aaf430
δ =1
0.5
0.2
0.1
2468
IF(AV) (A)
10
Ptot
(W)
8
6
4
003aaf431
a = 1.57
1.9
2.2
2.8
4.0
2
0
012345
IF(AV) (A)
Fig 1.
Vo = 1.499 V; Rs = 0.041
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
103
Fig 2.
Vo = 1.499 V; Rs = 0.041
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aaf446
IFSM
(A)
102
P
101
10-5
10-4
10-3
tp
tp (s)
t
10-2
Fig 3. Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
BYV25FD-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 March 2011
© NXP B.V. 2011. All rights reserved.
3 of 12



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NXP Semiconductors
BYV25FD-600
Enhanced ultrafast power diode
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
in free air
Min Typ
--
[1] -
50
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max Unit
3 K/W
- K/W
10
Zth(j-mb)
(K/W)
1
003aac235
101
P δ = tp
T
102
103
106
105
104
103
102
tp
T
101
t
1 10
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse width
BYV25FD-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 March 2011
© NXP B.V. 2011. All rights reserved.
4 of 12



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NXP
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