BYD33G Datasheet PDF - NXP


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BYD33G
NXP

Part Number BYD33G
Description Fast soft-recovery controlled avalanche rectifiers
Page 12 Pages

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DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D119
BYD33 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 05
1996 Sep 18



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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD33 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VR
IF(AV)
IF(AV)
IFRM
repetitive peak reverse voltage
BYD33D
BYD33G
BYD33J
BYD33K
BYD33M
BYD33U
BYD33V
continuous reverse voltage
BYD33D
BYD33G
BYD33J
BYD33K
BYD33M
BYD33U
BYD33V
average forward current
BYD33D to M
BYD33U and V
average forward current
BYD33D to M
BYD33U and V
repetitive peak forward current
BYD33D to M
BYD33U and V
Ttp = 55 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
Tamb = 65 °C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
Ttp = 55 °C; see Figs 6 and 7
MIN.
MAX. UNIT
200
400
600
800
1 000
1 200
1 400
V
V
V
V
V
V
V
200
400
600
800
1 000
1 200
1 400
V
V
V
V
V
V
V
1.30 A
1.26 A
0.70 A
0.67 A
12 A
11 A
1996 Sep 18
2



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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD33 series
SYMBOL
PARAMETER
IFRM repetitive peak forward current
BYD33D to M
BYD33U and V
IFSM non-repetitive peak forward current
ERSM
Tstg
Tj
non-repetitive peak reverse
avalanche energy
BYD33D to J
BYD33K to V
storage temperature
junction temperature
CONDITIONS
Tamb = 65 °C; see Figs 8 and 9
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Figs 12 and 13
MIN. MAX. UNIT
7A
6A
20 A
10 mJ
7 mJ
65 +175 °C
65 +175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
V(BR)R
IR
reverse avalanche breakdown
voltage
BYD33D
BYD33G
BYD33J
BYD33K
BYD33M
BYD33U
BYD33V
reverse current
trr reverse recovery time
BYD33D to J
BYD33K and M
BYD33U and V
Cd diode capacitance
CONDITIONS
IF = 1 A; Tj = Tj max;
see Figs 14 and 15
IF = 1 A;
see Figs 14 and 15
IR = 0.1 mA
VR = VRRMmax;
see Fig.16
VR = VRRMmax;
Tj = 165 °C; see Fig.16
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A
see Fig.21
f = 1 MHz; VR = 0 V;
see Figs 17 and 18
MIN.
300
500
700
900
1 100
1 300
1 500
TYP.
20
MAX. UNIT
1.1 V
1.3 V
V
V
V
V
V
V
V
1 µA
100 µA
250 ns
300 ns
500 ns
pF
1996 Sep 18
3



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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD33 series
SYMBOL
PARAMETER
-d-d--I--tR--
maximum slope of reverse recovery
current
BYD33D to J
BYD33K to V
CONDITIONS
when switched from
IF = 1 A to VR 30 V
and dIF/dt = 1 A/µs;
see Fig.20
MIN. TYP. MAX. UNIT
−−
−−
6 A/µs
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60 K/W
120 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.19.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 18
4




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