BVSS84L Datasheet PDF - ON Semiconductor

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BVSS84L
ON Semiconductor

Part Number BVSS84L
Description Power MOSFET
Page 4 Pages


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BSS84L, BVSS84L
Power MOSFET
Single P-Channel SOT-23
-50 V, 10 W
SOT23 Surface Mount Package Saves Board Space
AEC Q101 Qualified and PPAP Capable BVSS84L
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
50
± 20
ID
IDM
PD
TJ, Tstg
130
520
225
55 to
150
Vdc
Vdc
mA
mW
°C
Thermal Resistance JunctiontoAmbient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RqJA
TL
556 °C/W
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
October, 2012 Rev. 8
1
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V(BR)DSS
50 V
RDS(ON) MAX
10 W @ 10 V
PChannel
3
1
2
3
1
2
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD MG
G
1
Gate
2
Source
PD = Specific Device Code
M = Date Code
G = PbFree Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSS84LT1G
BVSS84LT1G
Package
SOT23
(PbFree)
SOT23
(PbFree)
Shipping
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BSS84LT1/D
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BSS84L, BVSS84L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
GateSource Threaded Voltage (VDS = VGS, ID = 250 mA)
Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 100 mAdc)
Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = 5.0 Vdc
VDS = 5.0 Vdc
VDG = 5.0 Vdc
TurnOn Delay Time
Rise Time
TurnOff Delay Time
VDD = 15 Vdc, ID = 2.5 Adc,
RL = 50 W
Fall Time
Gate Charge
VDD = 40 Vdc, ID = 0.5 A,
VGS = 10 V
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
VGS = 0 V, IS = 130 mA
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
50
0.9
50
Typ Max Unit
− − Vdc
mAdc
− −0.1
− −15
− −60
±10 nAdc
2.0
Vdc
4.7 10
W
− − mS
36 pF
17
6.5
3.6 ns
9.7
12
1.7
2.2 nC
− −0.130 A
− −0.520
− −2.2 V
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
VDS = 10 V
0.5
0.4
0.3
25°C
- 55°C
150°C
0.2
0.1
0
1 1.5 2 2.5 3 3.5 4
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
0.5
0.45 TJ = 25°C
0.4
VGS = -3.5 V
-3.25 V
0.35
0.3 -3.0 V
0.25
0.2 -2.75 V
0.15
-2.5 V
0.1
0.05 -2.25 V
0
0 1 2 3 4 5 6 7 8 9 10
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. OnRegion Characteristics
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BSS84L, BVSS84L
TYPICAL ELECTRICAL CHARACTERISTICS
9
VGS = -4.5 V
8
7
150°C
6
5 25°C
4
-55°C
3
2
0 0.1 0.2 0.3 0.4 0.5 0.6
-ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
7
6.5 VGS = -10 V
150°C
6
5.5
5
4.5
4 25°C
3.5
3
-55°C
2.5
2
0 0.1 0.2 0.3 0.4 0.5 0.6
-ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
2
1.8 VGS = -10 V
ID = -0.52 A
1.6
1.4
VGS = -4.5 V
1.2 ID = -0.13 A
1
0.8
0.6
- 55
-5 45 95
TJ, JUNCTION TEMPERATURE (°C)
145
Figure 5. OnResistance Variation with Temperature
-8
-7
VDS = -40 V
TJ = 25°C
-6
-5
-4
-3 ID = -0.5 A
-2
-1
0
0
500 1000 1500
QT, TOTAL GATE CHARGE (pC)
Figure 6. Gate Charge
2000
1
0.1
TJ = 150°C
25°C
-55°C
0.01
0.001
0
0.5 1.0 1.5 2.0 2.5
-VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
3.0
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E
A
A1
BSS84L, BVSS84L
PACKAGE DIMENSIONS
D
3
12
e
HE
b
SEE VIEW C
SOT23 (TO236)
CASE 31808
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
c
0.25
q
L
L1
VIEW C
MILLIMETERS
DIM MIN
NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80
2.90
3.04
E 1.20 1.30 1.40
e 1.78 1.90 2.04
L 0.10
0.20
0.30
L1 0.35
0.54
0.69
H E 2.10
q 0°
2.40
−−−
2.64
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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BSS84LT1/D
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