BVSS123LT1G Datasheet PDF - ON Semiconductor

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BVSS123LT1G
ON Semiconductor

Part Number BVSS123LT1G
Description Power MOSFET
Page 5 Pages


BVSS123LT1G datasheet pdf
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BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
NChannel SOT23
Features
AECQ101 Qualified and PPAP Capable BVSS123LT1G
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
DrainSource Voltage
VDSS 100 Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
Adc
ID 0.17
IDM 0.68
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 3) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR5 = 1.0  0.75  0.062 in.
http://onsemi.com
170 mAMPS
100 VOLTS
RDS(on) = 6 W
NChannel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
3 Drain
3
1
2
SOT23
CASE 318
STYLE 21
SA MG
G
12
Gate Source
SA = Device Code
M = Date Code
G = PbFree Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 6
1
Publication Order Number:
BSS123LT1/D
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BSS123LT1G, BVSS123LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
TJ = 125°C
GateBody Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 100 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS(4)
TurnOn Delay Time
TurnOff Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 W)
REVERSE DIODE
Diode Forward OnVoltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol Min Typ Max Unit
V(BR)DSS
100
IDSS
IGSS
Vdc
mAdc
15
60
50 nAdc
VGS(th)
rDS(on)
gfs
0.8 2.8 Vdc
5.0 6.0
W
80
mmhos
Ciss
Coss
Crss
20
9.0
4.0
pF
pF
pF
td(on)
td(off)
VSD
20
40
ns
ns
− − 1.3 V
ORDERING INFORMATION
Device
Package
Shipping
BSS123LT1G
SOT23
(PbFree)
3000 / Tape & Reel
BSS123LT3G
SOT23
(PbFree)
10000 / Tape & Reel
BVSS123LT1G
SOT23
(PbFree)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8 TA = 25°C
1.6
1.4
VGS = 10 V
9V
1.2 8 V
1.0
7V
0.8
0.6 6 V
0.4 5 V
0.2 4 V
3V
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VDS, DRAN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
VDS = 10 V
0.8
0.6
0.4
0.2
- 55°C
25°C
125°C
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0 VGS = 10 V
ID = 200 mA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 60
- 20 + 20 + 60 + 100
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
DrainSource OnResistance
+ 140
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
- 60
1
0.1
VDS = VGS
ID = 1.0 mA
- 20 + 20 + 60 + 100
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
+ 140
100 ms
10 ms
1 ms
0.01
0.0010.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1 10 100 1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. Maximum Rated Forward Biased
Safe Operating Area
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3
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BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 6. Thermal Response
1 oz. Cu Pad, 5mm thick, 25mm2 area
1 10 100 1000
http://onsemi.com
4
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