BUX32A Datasheet PDF - Inchange Semiconductor

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BUX32A
Inchange Semiconductor

Part Number BUX32A
Description Silicon NPN Power Transistor
Page 2 Pages

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUX32/A/B
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUX32
= 450V (Min)-BUX32A
= 450V (Min)-BUX32B
·Low Saturation Voltage
APPLICATIONS
·Designed for off-line power supplies and are also well suited
for use in a wide range of inverter or converter circuits and
pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter
Voltage(VBE= 0)
BUX32
BUX32A
BUX32B
800
900
1000
V
VCEO
Collector-Emitter
Voltage
BUX32
BUX32A
BUX32B
400
450
500
V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
10 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
5
150
200
-65~200
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.0 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/

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