BUX20A Datasheet PDF - Inchange Semiconductor

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BUX20A
Inchange Semiconductor

Part Number BUX20A
Description Silicon NPN Power Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX20A
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min)
·High Current Capability
·Good Linearity of hFE
APPLICATIONS
·Designed for switching and linear applications in military
and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO(SUS) Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
IBB Base Current-Continuous
PC
Collector Power Dissipation
@TC=100
TJ Junction Temperature
Tstg Storage Temperature
160 V
125 V
7V
40 A
50 A
8A
140 W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.7 /W
isc Websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX20A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 40A; IB= 4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 40A; IB= 4A
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 100V;IB= 0
VCE= 160V;VBE= -1.5V
VCE= 160V;VBE= -1.5V; TC= 125
VEB= 8V; IC=0
hFE-1
DC Current Gain
IC= 20A ; VCE= 2V
hFE-2
DC Current Gain
IC= 40A ; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 2A ; VCE= 15V; ftest= 10MHz
MIN TYP. MAX UNIT
125 V
0.6 V
1.2 V
2.0 V
3.0 mA
3.0
12
mA
5.0 mA
20 60
10
50 MHz
isc Websitewww.iscsemi.cn
2
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BUX20A datasheet pdf
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