BUL146G Datasheet PDF - ON Semiconductor

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BUL146G
ON Semiconductor

Part Number BUL146G
Description SWITCHMODE NPN Bipolar Power Transistor
Page 11 Pages


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BUL146G, BUL146FG
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL146G / BUL146FG have an applications specific
stateoftheart die designed for use in fluorescent electric lamp
ballasts to 130 W and in Switchmode Power supplies for all types of
electronic equipment.
Features
Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain
Fast Switching
No Coil Required in Base Circuit for TurnOff (No Current Tail)
Full Characterization at 125°C
Two Packages Choices: Standard TO220 or Isolated TO220
Parametric Distributions are Tight and Consistent LottoLot
BUL146F, Case 221D, is UL Recognized to 3500 VRMS: File # E69369
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating
CollectorEmitter Sustaining Voltage
CollectorBase Breakdown Voltage
EmitterBase Voltage
Collector Current Continuous
Peak (Note 1)
Base Current
Continuous
Peak (Note 1)
RMS Isolation Voltage (Note 2)
(for 1 sec, R.H. < 30%, TC = 25_C)
Total Device Dissipation @ TC = 25_C
BUL146
BUL146F
Derate above 25°C
BUL146
BUL146F
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VVIISSOOLL12
VISOL3
PD
Value
400
700
9.0
6.0
15
4.0
8.0
BUL146F
4500
3500
1500
100
40
0.8
0.32
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
W
W/_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
TJ, Tstg 65 to 150 _C
Characteristics
Thermal Resistance, JunctiontoCase
BUL146
BUL146F
Symbol
RqJC
Max
1.25
3.125
Unit
_C/W
Thermal Resistance, JunctiontoAmbient RqJA
62.5 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8from Case for 5 Seconds
TL
260 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
2. Proper strike and creepage distance must be provided.
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POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
MARKING
DIAGRAMS
123
TO220AB
CASE 221A09
STYLE 1
BUL146G
AYWW
1 23
TO220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
BUL146FG
AYWW
G = PbFree Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*For additional information on our PbFree strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 Rev. 9
1
Publication Order Number:
BUL146/D
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BUL146G, BUL146FG
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
VCEO(sus)
400
Vdc
ICEO
− − 100 mAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
(TC = 125°C)
(TC = 125°C)
ICES
− − 100 mAdc
− − 500
− − 100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
− − 100 mAdc
ON CHARACTERISTICS
BaseEmitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)
BaseEmitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)
VBE(sat)
0.82 1.1 Vdc
0.93 1.25
CollectorEmitter Saturation Voltage
CollectorEmitter Saturation Voltage
(IC = 1.3 Adc, IB = 0.13 Adc)
(TC = 125°C)
(IC = 3.0 Adc, IB = 0.6 Adc)
(TC = 125°C)
VCE(sat)
0.22 0.5 Vdc
0.20 0.5
0.30 0.7
0.30 0.7
DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc)
DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
(TC = 125°C)
(TC = 125°C)
(TC = 125°C)
hFE
14 34
30
12 20
12 20
8.0 13
7.0 12
10 20
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT 14 MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
COB
95 150 pF
Input Capacitance (VEB = 8.0 V)
CIB
1000
1500
pF
Dynamic Saturation Voltage:
Determined 1.0 ms and
3.0 ms respectively after
rising IB1 reaches 90% of
final IB1
(see Figure 18)
(IC = 1.3 Adc
IB1 = 300 mAdc
VCC = 300 V)
1.0 ms
3.0 ms
(TC = 125°C)
(TC = 125°C)
(IC = 3.0 Adc
IB1 = 0.6 Adc
VCC = 300 V)
1.0 ms (TC = 125°C)
3.0 ms (TC = 125°C)
VCE(dsat)
2.5
6.5
0.6
2.5
3.0
7.0
0.75
1.4
V
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BUL146G, BUL146FG
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 ms)
TurnOn Time
TurnOff Time
(IC = 1.3 Adc, IB1 = 0.13 Adc
IB2 = 0.65 Adc, VCC = 300 V)
(TC = 125°C)
(TC = 125°C)
ton
toff
TurnOn Time
(IC = 3.0 Adc, IB1 = 0.6 Adc
IB1 = 1.5 Adc, VCC = 300 V)
(TC = 125°C)
ton
TurnOff Time
(TC = 125°C)
toff
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
(IC = 1.3 Adc, IB1 = 0.13 Adc
IB2 = 0.65 Adc)
(TC = 125°C)
tfi
Storage Time
Crossover Time
Fall Time
(IC = 3.0 Adc, IB1 = 0.6 Adc
IB2 = 1.5 Adc)
(TC = 125°C)
(TC = 125°C)
(TC = 125°C)
tsi
tc
tfi
Storage Time
Crossover Time
Fall Time
(IC = 3.0 Adc, IB1 = 0.6 Adc
IB2 = 0.6 Adc)
(TC = 125°C)
(TC = 125°C)
(TC = 125°C)
tsi
tc
tfi
Storage Time
Crossover Time
(TC = 125°C)
(TC = 125°C)
tsi
tc
Min
80
2.6
Typ Max
100 200
90
1.35 2.5
1.90
90 150
100
1.7 2.5
2.1
115 200
120
1.35 2.5
1.75
200 350
210
85 150
100
1.75 2.5
2.25
175 300
200
180
210
3.8
4.5
230 350
400
Unit
ns
ms
ns
ms
ns
ms
ns
ns
ms
ns
ns
ms
ns
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100
TJ = 125°C
TJ = 25°C
10 TJ = - 20°C
BUL146G, BUL146FG
TYPICAL STATIC CHARACTERISTICS
100
VCE = 1 V
TJ = 125°C
TJ = 25°C
10 TJ = - 20°C
VCE = 5 V
1
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
10
1
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volts
10
2
TJ = 25°C
10
IC = 1 A
2A 3A 5A
6A
1
0
0.01 0.1
1
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
10
1
0.1 IC/IB = 10
IC/IB = 5
0.01
0.01
0.1
TJ = 25°C
TJ = 125°C
1 10
IC COLLECTOR CURRENT (AMPS)
Figure 4. CollectorEmitter Saturation Voltage
1.2
1.1
1
0.9
0.8
0.7 TJ = 25°C
0.6
0.5 TJ = 125°C
0.4
0.01
0.1
IC/IB = 5
IC/IB = 10
1
IC, COLLECTOR CURRENT (AMPS)
Figure 5. BaseEmitter Saturation Region
10
10000
1000
100
10
1
1
TJ = 25°C
Cib f = 1 MHz
Cob
10 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
1000
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