BUL146G Datasheet PDF - ON Semiconductor

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BUL146G
ON Semiconductor

Part Number BUL146G
Description SWITCHMODE NPN Bipolar Power Transistor
Page 11 Pages


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BUL146G, BUL146FG
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL146G / BUL146FG have an applications specific
stateoftheart die designed for use in fluorescent electric lamp
ballasts to 130 W and in Switchmode Power supplies for all types of
electronic equipment.
Features
Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain
Fast Switching
No Coil Required in Base Circuit for TurnOff (No Current Tail)
Full Characterization at 125°C
Two Packages Choices: Standard TO220 or Isolated TO220
Parametric Distributions are Tight and Consistent LottoLot
BUL146F, Case 221D, is UL Recognized to 3500 VRMS: File # E69369
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating
CollectorEmitter Sustaining Voltage
CollectorBase Breakdown Voltage
EmitterBase Voltage
Collector Current Continuous
Peak (Note 1)
Base Current
Continuous
Peak (Note 1)
RMS Isolation Voltage (Note 2)
(for 1 sec, R.H. < 30%, TC = 25_C)
Total Device Dissipation @ TC = 25_C
BUL146
BUL146F
Derate above 25°C
BUL146
BUL146F
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VVIISSOOLL12
VISOL3
PD
Value
400
700
9.0
6.0
15
4.0
8.0
BUL146F
4500
3500
1500
100
40
0.8
0.32
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
W
W/_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
TJ, Tstg 65 to 150 _C
Characteristics
Thermal Resistance, JunctiontoCase
BUL146
BUL146F
Symbol
RqJC
Max
1.25
3.125
Unit
_C/W
Thermal Resistance, JunctiontoAmbient RqJA
62.5 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8from Case for 5 Seconds
TL
260 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
2. Proper strike and creepage distance must be provided.
http://onsemi.com
POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
MARKING
DIAGRAMS
123
TO220AB
CASE 221A09
STYLE 1
BUL146G
AYWW
1 23
TO220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
BUL146FG
AYWW
G = PbFree Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*For additional information on our PbFree strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 Rev. 9
1
Publication Order Number:
BUL146/D
Free Datasheet http://www.datasheet4u.com/

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