BUK9Y3R0-40E Datasheet PDF - NXP Semiconductors


www.Datasheet-PDF.com

BUK9Y3R0-40E
NXP Semiconductors

Part Number BUK9Y3R0-40E
Description N-channel logic level MOSFET
Page 13 Pages

BUK9Y3R0-40E datasheet pdf
View PDF for PC
BUK9Y3R0-40E pdf
View PDF for Mobile


No Preview Available !

BUK9Y3R0-40E
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
12 February 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lighting and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
http://www.DataSheet4U.net/
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 32 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 40 V
- - 100 A
- - 194 W
-
2.47 3
- 10.7 - nC
Scan or click this QR code to view the latest information for this product
datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

NXP Semiconductors
BUK9Y3R0-40E
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9Y3R0-40E
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
7. Marking
Table 4. Marking codes
Type number
BUK9Y3R0-40E
http://www.DataSheet4U.net/
Marking code
93E040
Version
SOT669
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
Tj ≤ 175 °C; Pulsed
ID drain current
Tmb = 25 °C; VGS = 5 V; Fig. 1
Tmb = 100 °C; VGS = 5 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
[1][2]
[3]
[3]
Min
-
-
-10
-15
-
-
-
-
Max
40
40
10
15
100
100
718
194
Unit
V
V
V
V
A
A
A
W
BUK9Y3R0-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 February 2013
© NXP B.V. 2013. All rights reserved
2 / 13
datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

NXP Semiconductors
BUK9Y3R0-40E
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
-55 175 °C
-55 175 °C
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[3] -
-
ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[4][5]
-
100 A
718 A
193.8 mJ
[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm
[2] Significantly longer life times are achieved by lowering Tj and or VGS
[3] Continuous current is limited by package.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Refer to application note AN10273 for further information.
200
ID
(A)
160
003aaj065
120
Pder
(%)
03aa16
120
(1)
80
40
80
http://www.DataSheet4U.net/
40
Fig. 1.
0
0 30 60 90 120 150
Tj (°C)
(1) Capped at 100A due to package
180
Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9Y3R0-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 February 2013
© NXP B.V. 2013. All rights reserved
3 / 13
datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

NXP Semiconductors
103
IAL
(A)
102
10
1
BUK9Y3R0-40E
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
003aaj066
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1
tAL (ms)
10
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
1
Limit RDSon = VDS / ID
http://www.DataSheet4U.net/
DC
003aaj067
tp = 10 us
100 us
1 ms
10 ms
100 ms
10-1
10-1
1
10
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
- - 0.77 K/W
BUK9Y3R0-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 February 2013
© NXP B.V. 2013. All rights reserved
4 / 13
datasheet pdf - http://www.DataSheet4U.net/




BUK9Y3R0-40E datasheet pdf
Download PDF
BUK9Y3R0-40E pdf
View PDF for Mobile


Similiar Datasheets : BUK9Y3R0-40E

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact