BUK215-50YT Datasheet PDF - NXP

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BUK215-50YT
NXP

Part Number BUK215-50YT
Description TOPFET High Side Switch SMD Version
Page 13 Pages


BUK215-50YT datasheet pdf
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Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
DESCRIPTION
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic surface mount
package.
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
FEATURES
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Latched overtemperature
protection
Load current limiting
Latched short circuit load
protection
Overvoltage and undervoltage
shutdown with hysteresis
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
QUICK REFERENCE DATA
SYMBOL PARAMETER
IL Nominal load current (ISO)
SYMBOL PARAMETER
VBG Continuous off-state supply voltage
IL Continuous load current
Tj Continuous junction temperature
RON On-state resistance Tj = 25˚C
FUNCTIONAL BLOCK DIAGRAM
STATUS
INPUT
GROUND
CONTROL &
PROTECTION
CIRCUITS
RG
MIN.
9
UNIT
A
MAX.
50
20
150
38
UNIT
V
A
˚C
m
BATT
POWER
MOSFET
LOAD
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426
PIN CONFIGURATION
PIN DESCRIPTION
1 Ground
om2 Input
.c3 (connected to mb)
U4 Status
t45 Load
eemb Battery
www.DataShJune 2000
mb
3
12 45
Fig. 2.
1
SYMBOL
IB
TOPFET L
S HSS
G
Fig. 3.
Rev 1.000



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Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VBG
IL
PD
Tstg
Tj
Tsold
-VBG
-VBG
RI, RS
Continuous supply voltage
Continuous load current
Total power dissipation
Storage temperature
Continuous junction temperature1
Mounting base temperature
Reverse battery voltages2
Continuous reverse voltage
Peak reverse voltage
Application information
External resistors3
Input and status
Tmb 95˚C
Tmb 25˚C
during soldering
to limit input, status currents
II, IS Continuous currents
II, IS Repetitive peak currents
Inductive load clamping
EBL Non-repetitive clamping energy
δ ≤ 0.1, tp = 300 µs
IL = 10 A, VBG = 16 V
Tj 150˚C prior to turn-off
ESD LIMITING VALUE
SYMBOL PARAMETER
VC Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 k
MIN.
0
-
-
-55
-
-
-
-
3.2
-5
-50
-
MIN.
-
MAX.
50
20
67
175
150
260
16
32
-
5
50
150
MAX.
2
UNIT
V
A
W
˚C
˚C
˚C
V
V
k
mA
mA
mJ
UNIT
kV
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
omThermal resistance4
.cRth j-mb
Junction to mounting base
CONDITIONS
-
MIN. TYP. MAX. UNIT
- 1.52 1.86 K/W
heet4U1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
S2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
talimit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj
rating must be observed.
a3 To limit currents during reverse battery and transient overvoltages (positive or negative).
.D4 Of the output power MOS transistor.
wwwJune 2000
2
Rev 1.000



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Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
STATIC CHARACTERISTICS
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Clamping voltages
VBG Battery to ground
VBL Battery to load
-VLG Negative load to ground
-VLG Negative load voltage1
Supply voltage
VBG Operating range2
Currents
IB Quiescent current3
IL Off-state load current4
IG Operating current5
IL Nominal load current6
Resistances
RON On-state resistance
RON On-state resistance
IG = 1 mA
IL = IG = 1 mA
IL = 10 mA
IL = 10 A; tp = 300 µs
battery to ground
50 55 65
50 55 65
18 23 28
20 25 30
V
V
V
V
5.5 -
35 V
9 V VBG 16 V
VLG = 0 V
VBL = VBG
IL = 0 A
VBL = 0.5 V
VBG
IL
9 to 35 V 10 A
6 V 10 A
Tmb = 25˚C
Tmb = 25˚C
Tmb = 85˚C
tp7 Tmb
300 µs
300 µs
25˚C
150˚C
25˚C
150˚C
-
-
-
-
-
9
-
-
-
-
- 20 µA
0.1 2 µA
- 20 µA
0.1 1 µA
2 4 mA
- -A
28 38 m
- 70 m
36 48 m
- 88 m
RG
Internal ground resistance
IG = 10 mA
95 150 190
eet4U.com1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
h2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
S4 The measured current is in the load pin only.
ta5 This is the continuous current drawn from the supply with no load connected, but with the input high.
a6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
.D7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
wwwJune 2000
3
Rev 1.000



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Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
INPUT CHARACTERISTICS
9 V VBG 16 V. Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
II Input current
VIG = 5 V
20 90 160 µA
VIG Input clamping voltage
II = 200 µA
5.5 7 8.5 V
VIG(ON)
Input turn-on threshold voltage
- 2.4 3
V
VIG(OFF)
Input turn-off threshold voltage
1.5 2.1
-
V
VIG
Input turn-on hysteresis
- 0.3 -
V
II(ON) Input turn-on current
VIG = 3 V
- - 100 µA
II(OFF)
Input turn-off current
VIG = 1.5 V
10 -
- µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VSG Status clamping voltage
VSG Status low voltage
IS = 100 µA
IS = 100 µA
5.5 7 8.5
- -1
Tmb = 25˚C - 0.7 0.8
V
V
V
IS Status leakage current VSG = 5 V
IS
Status saturation current1
VSG = 5 V
Tmb = 25˚C
-
-
2
- 15 µA
0.1 1 µA
7 12 mA
Application information
RS External pull-up resistor
- 47 - k
ataSheet4U.com1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
.Dprevent possible interference with normal operation of the device.
wwwJune 2000
4
Rev 1.000



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