BU2725AX Datasheet PDF - NXP

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BU2725AX
NXP

Part Number BU2725AX
Description Silicon Diffused Power Transistor
Page 7 Pages


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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725AX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 7.0 A; IB = 1.75 A
f = 16 kHz
ICsat = 7.0 A; f = 16kHz
TYP.
-
-
-
-
-
-
7.0
5.8
MAX.
1700
825
12
30
45
1.0
-
6.5
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT399
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
VC Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 k)
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
12
30
12
20
200
9
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
MIN. MAX. UNIT
- 10 kV
1 Turn-off current.
September 1997
1
Rev 1.400



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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725AX
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Repetitive peak voltage from all R.H. 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 22 - pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 7.0 A; IB = 1.75 A
IC = 7.0 A; IB = 1.75 A
IC = 0.1 A; VCE = 5 V
IC = 7 A; VCE = 1 V
MIN.
-
-
-
7.5
825
-
-
-
4
TYP. MAX. UNIT
- 1.0 mA
- 2.0 mA
- 1.0
13.5 -
--
mA
V
V
- 1.0
- 1.1
22 -
6 8.5
V
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (16 kHz line
deflection circuit)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
ICsat = 7.0 A; LC = 650 µH; Cfb = 18 nF;
VCC = 162 V; IB(end) = 1.5 A; LB = 2 µH;
-VBB = 4 V;
TYP.
5.8
0.6
MAX.
6.5
0.8
UNIT
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.400



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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725AX
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
6V
30-60 Hz
100R
1R
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
TRANSISTOR
IC DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.3. Switching times waveforms (16 kHz).
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB T.U.T.
Cfb
Fig.5. Switching times test circuit.
hFE
100
VCE = 5 V
BU2727A/AF
Ths = 25 C
Ths = 85 C
10
1
0.01
Fig.6.
0.1 1 10
IC / A
DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
100
September 1997
3
Rev 1.400



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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725AX
hFE
100
VCE = 1 V
10
BU2727A/AF
Ths = 25 C
Ths = 85 C
1
0.01
Fig.7.
0.1 1 10
IC / A
DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
100
ts/tf/ us
10
BU2527AFX,DFX
9
8
7
6
5
4
3
2
1
0
0 1 2 3 IB / A 4
Fig.10. Limit storage and fall time.
ts = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz
VCEsat / V
10
Ths = 85 C
Ths = 25 C
1
IC/IB = 12
0.1
BU2727A/AF
IC/IB = 5
0.01
0.1 1 10 100
IC / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Ths)
VBEsat / V
1
IC = 6 A
0.9
BU2727A/AF
0.8
4A
0.7
Ths = 85 C
Ths = 25 C
0.6
0
Fig.9.
1234
IB / A
Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
September 1997
4
Zth / (K/W)
10
BU2525AF
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
Tt
1E+00
Fig.12. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
Rev 1.400



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