BU2527DF Datasheet PDF - SavantIC

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BU2527DF
SavantIC

Part Number BU2527DF
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2527DF
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
ICM Collector current -peak
IB Base current (DC)
IBM Base current -peak
Ptot Total power dissipation
TC=25
Tj Max.operating junction temperature
Tstg Storage temperature
VALUE
1500
800
7.5
12
30
8
12
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W



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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2527DF
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=8A ;IB=1.6A
VCE=BVCES; VBE=0
Tj=125
VEB=6V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
CC Collector capacitance
IE=0 ; VCB=10V; f=1MHz
VF Diode forward voltage
IF=8A
800 V
7.5 13.5
V
5.0 V
1.1 V
1.0
2.0
mA
110 mA
11
5 10
145 pF
2.0 V
2



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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
BU2527DF
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3



BU2527DF datasheet pdf
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BU2527DF pdf
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