BU2522AF Datasheet PDF - SavantIC

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BU2522AF
SavantIC

Part Number BU2522AF
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2522AF
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors.
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Collector current (DC)
Collector current-peak
Base Collector current (DC)
Base current-peak
Total power dissipation
TC=25
Max.operating junction temperature
Storage temperature
VALUE
1500
800
10
25
6
9
45
150
-65~150
UNIT
V
V
A
A
A
A
W



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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2522AF
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter breakdown voltage IC=0.1A ;IB=0;L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6.0A ;IB=1.2A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=6.0A ;IB=1.2A
VCE=BVCES; VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
CC Collector capacitance
IE=0 ; VCB=10V; f=1MHz
MIN TYP. MAX UNIT
800 V
7.5 13.5
V
5.0 V
1.3 V
0.25
2.0
mA
0.1 mA
10
578
115 pF
2



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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
BU2522AF
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3



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