BU2520DF Datasheet PDF - New Jersey Semiconductor

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BU2520DF
New Jersey Semiconductor

Part Number BU2520DF
Description Silicon NPN Power Transistor
Page 2 Pages


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, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973)376-2922
(212)227-6005
FAX: (973) 376-8960
BU2520DF
DESCRIPTION
• High Switching Speed
• High Voltage
• Built-in Ddamper Ddiode
APPLICATIONS
• For use in horizontal deflection circuits of large screen
color TV receivers
PIN 1.BASE
2. COLLECT OR
3. EMITTER
~C-CPFe package
ABSOLUTE MAXIMUM RATINGS (Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO Collector-Emitter Voltage
800 V
VEBO Emitter-Base Voltage
7.5 V
Ic Collector Current-Continuous
10 A
ICM Collector Current-peak
25 A
IB Base Current-Continuous
IBM Base Current-peak
Collector Power Dissipation
PC @TC=25"C
T, Junction Temperature
Tstg Storage Temperature Range
6
9
45
150
-55-150
A
A
W
•c
c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.8 K/W
mm
JIM WIN VAX
A 20.75 21,30
& 14.7Q 1 :" ; :
r 4.SO : ::
D 0.90 no
F 3.20 3,40
h 3,70 4.30
j OiSO 0.70
K 1?,-:.:1 17,00
L 1.90 2,10
N 10.80 11,00
0 5.60 : 30
R 1,30 2,20
S
3,10
3,50
T 3,70 9.3-0
J 0,55 0.75
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of eoine
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors



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Silicon NPN Power Transistor
BU2520DF
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; IB= 0, L= 25mH
MIN TYP. MAX UNIT
800 V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; lc= 0
7.5 13.5
V
VcE(sat) Collector-Emitter Saturation Voltage lc=6A; IB=1.2A
VeE(sat) Base-Emitter Saturation Voltage
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
IC=6A;IB=1.2A
VOE= BVcES; VBE= 0
VCE= BVcES; VBE= 0;TC=125'C
VEB= 7.5V; lc= 0
100
5.0 V
1.1 V
1.0
2.0
mA
300 mA
hpE-1
DC Current Gain
lc= 1A; VCE= 5V
13
hFE-2
DC Current Gain
lc= 6A; VCE= 5V
5 7 9.5
VECF
C-E Diode Forward Voltage
IF=6A
2.2 V
COB Output Capacitance
I E = 0 ; V C B = 10V;f,est= 1MHz
115 PF
Switching times (16kHz line deflection circuit)
tstg Storage Time
tf Fall Time
lc= 6A, lB(end)= 1 .OA; LB= 5.3 u H;
LC- DOU U H, l_.ft>- lynr
-VBB=4V; (-dlB/dt=0.8A/ns)
5.5 u s
0.5 u s



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