BU2520DF Datasheet PDF - NXP


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BU2520DF
NXP

Part Number BU2520DF
Description Silicon Diffused Power Transistor
Page 7 Pages

BU2520DF datasheet pdf
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emmiter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 6.0 A; IB = 1.2 A
IF = 6.0 A
ICsat = 6.0 A; IB(end) = 1.0 A
TYP.
-
-
-
-
-
-
6
-
0.35
MAX.
1500
800
10
25
45
5.0
-
2.2
0.5
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
10
25
6
9
150
6
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.400



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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Repetitive peak voltage from all R.H. 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 22 - pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 2
ICES
IEBO
BVEBO
Rbe
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.2 A
IC = 6.0 A; IB = 1.2 A
IC = 1.0 A; VCE = 5 V
IC = 6 A; VCE = 5 V
IF = 6 A
MIN.
-
-
100
7.5
-
800
-
-
-
5
-
TYP. MAX. UNIT
- 1.0 mA
- 2.0 mA
- 300
13.5 -
50 -
--
mA
V
V
- 5.0
- 1.1
13 -
7 9.5
- 2.2
V
V
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc Collector capacitance
Switching times (16 kHz line
deflection circuit)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 6.0 A; LC = 650 µH; Cfb = 19 nF;
IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
TYP.
115
4.5
0.35
MAX.
-
5.5
0.5
UNIT
pF
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.400



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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520DF
TRANSISTOR
IC DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms (16 kHz).
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.3. Switching times test circuit.
hFE
100
10
5V
1V
Tj = 25 C
Tj = 125 C
1
0.1
Fig.4.
1 10
IC / A
100
Typical DC current gain. hFE = f (IC)
parameter VCE
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1.0
0.9
0.8
0.7 IC/IB=
3
0.6
4
0.5 5
0.4
0.1
1
IC / A
10
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
VCESAT / V
1.0
0.9
0.8
0.7
0.6
IC/IB =
5
4
3
0.5
Tj = 25 C
0.4 Tj = 125 C
0.3
0.2
0.1
0
0.1
1 10
IC / A
100
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.400



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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520DF
VBESAT / V
1.2
Tj = 25 C
1.1 Tj = 125 C
1.0
0.9
IC=
0.8 8 A
0.7
0.6
0
Fig.7.
6A
5A
4A
123
IB / A
4
Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
VCESAT / V
10
Tj = 25 C
Tj = 125 C
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
IB / A
10
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Eoff / uJ
1000
IC = 6 A
5A
100
10
0.1
1
IB / A
10
Fig.9. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; parameter frequency
ts, tf / us
12
11 ts
10
9
8
7
6
5 IC =
4 6A
3
2 5A
1 tf
0
0.1
1
IB / A
10
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Ths)
10 Zth / (K/W)
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D = tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
Tt
1E+00
Fig.12. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
September 1997
4
Rev 1.400




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