BTS50055-1TMC Datasheet PDF - Infineon Technologies


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BTS50055-1TMC
Infineon Technologies

Part Number BTS50055-1TMC
Description Smart Highside High Current Power Switch
Page 17 Pages

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Data Sheet BTS50055-1TMC
Smart Highside High Current Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of Vbb protection2)
Electrostatic discharge (ESD) protection
Green product (RoHS compliant)
AEC qualified
Product Summary
Operating voltage
On-state resistance
Noinal current
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(on)
RON
IL(nom)
IL(ISO)
IL(SC)
IL : IIS
PG-TO220-7-4
7
Application
Power switch with current sense diagnostic
1
SM D
feedback for 12 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
Replaces electromechanical relays, fuses and discrete circuits
5.0 ... 34 V
6.0 m
17 A
70 A
130 A
14 000
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
VIS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 8).
Infineon Technologies AG
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2010-April-27



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Pin
1
2
3
4
5
6
7
Data Sheet BTS50055-1TMC
Symbol
OUT
OUT
IN
Vbb
IS
OUT
OUT
Function
O Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!3)
O Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!3)
I Input, activates the power switch in case of short to ground
+ Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the Vbb connection
instead of this pin4).
S Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 6)
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!3)
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 4)
Supply voltage for short circuit protection,
Tj,start =-40 ...+150°C: (EAS limitation see diagram on page 9)
Load current (short circuit current, see page 5)
Load dump protection VLoadDump = VA + Vs, VA = 13.5 V
RI5) = 2 , RL = 0.54 , td = 200 ms,
IN, IS = open or grounded
Vbb
Vbb
IL
VLoad dump6)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,
IL = 20 A, ZL = 7.5 mH, 0 , (see diagrams on page 9 )
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Tj
Tstg
Ptot
EAS
VESD
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 7
IIN
IIS
Values Unit
42 V
34 V
self-limited A
75 V
-40 ...+150
-55 ...+150
170
°C
W
1.5 J
4 kV
+15 , -250 mA
+15 , -250
3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4) Otherwise add about 0.3 mto the RON if the pin is used instead of the tab.
5) RI = internal resistance of the load dump test pulse generator.
6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
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Data Sheet BTS50055-1TMC
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case:
junction - ambient (free air):
SMD version, device on PCB8):
Electrical Characteristics
RthJC7)
RthJA
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Values
min typ max
-- -- 0.75
-- 60
--
33
Unit
K/W
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7)
VIN = 0, IL = 20 A
Tj = 25 °C:
Tj = 150 °C:
VIN = 0, IL = 90 A
Vbb = 6V9), VIN = 0, IL = 20 A
Tj = 150 °C:
Tj = 150 °C:
Nominal load current 10), (Tab to pins 1,2,6,7)
ISO Proposal: VON = 0.5 V,TC = 85°C,Tj 150°C 11)
SMD 8): TA = 85 °C, Tj 150 °C VON 0.5 V
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 12
VON = 1.8 V, Tc = 150 °C:
Turn-on time12)
IIN to 90% VOUT:
Turn-off time
IIN to 10% VOUT:
RL = 1 , Tj =-40...+150°C
Slew rate on 12) (10 to 30% VOUT )
RL = 1 , TJ = 25 °C
Slew rate off 12) (70 to 40% VOUT )
RL = 1 , TJ = 25 °C
RON
IL(ISO)
IL(NOM)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
-- 4.4 6.0 m
7.9 10.5
-- 10.7
-- 10 17
55
13.6
70
17
--
--
250 -- --
150 -- --
130 230 450
90 130 210
A
A
µs
0.1 0.25 0.6 V/µs
0.15 0.35 0.6 V/µs
7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
10) not subject to production test, specified by design
11) TJ is about 105°C under these conditions.
12) See timing diagram on page 13.
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Data Sheet BTS50055-1TMC
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
VbIN = 12 V, IL = - 20 A
Tj = 25 °C:
see page 9
Tj = 150 °C:
Nominal inverse load current (Pins 1,2,6,7 to Tab)
VON = -0.5 V, Tc = 85 °C11)
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
RON(inv)
IL(inv)
-VON
Operating Parameters
Operating voltage (VIN = 0) 9, 13)
Undervoltage shutdown 14)
Undervoltage start of charge pump
see diagram page 14
Overvoltage protection15)
Ibb = 15 mA
Tj =-40°C:
Tj = 25...+150°C:
Standby current
IIN = 0
Tj =-40...+25°C:
Tj = 150°C:
Vbb(on)
VbIN(u)
VbIN(ucp)
VbIN(Z)
Ibb(off)
Values
Unit
min typ max
-- 4.4 6.0 m
7.9 10.5
55 70
-- A
-- 0.6
-- V
5.0 -- 34
1.5 3.0 4.5
V
V
3.0 4.5 6.0 V
60 -- -- V
62 66
--
-- 15 25 µA
-- 25 50
13) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).
For all voltages 0 ... 34 V the device is provides embedded protection functions against overtemperature and
short circuit.
14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT Vbb - 3 V.
15) See also VON(CL) in circuit diagram on page 8.
Page 4 of 17
2010-April-27




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