BSS84Z Datasheet PDF - Unisonic Technologies

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BSS84Z
Unisonic Technologies

Part Number BSS84Z
Description P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Page 3 Pages


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UNISONIC TECHNOLOGIES CO., LTD
BSS84Z
Preliminary
0.13A, 50V P-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
DESCRIPTION
These P-Channel enhancement mode field vertical D-MOS
transistors are in a SOT-23-3 SMD package, and in most
applications they require up to 0.13A DC and can deliver current up
to 0.52A.
This product is particularly suited to low voltage applications
requiring a low current high side switch.
FEATURES
* RDS(ON) < 10@ VGS=-4.5V, ID=-0.1A
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
BSS84ZG-AE2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-23-3
Pin Assignment
123
SGD
Packing
Tape Reel
MARKING
S84G
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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BSS84Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-50
V
Gate-Source Voltage
Continuous Drain Current
DC
Pulse
VGSS
ID
±20
-0.13
-0.52
V
A
Power Dissipation
PD 0.36 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θJA
RATINGS
350
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
ON CHARACTERISTICS (Note)
Gate-Threshold Voltage
Static Drain–Source On–Resistance
On-State Drain Current
Forward Transconductance
BVDSS
IDSS
IGSS
VGS=0V, ID=-250µA
VDS=-50V, VGS=0V
VDS=0V, VGS=±20V
VGS(TH)
RDS(ON)
ID(ON)
gFS
VDS=VGS, ID=-1m A
VGS=-4.5V, ID=-0.1A
VGS=-10 V, VDS=-5V
VDS=-25V, ID=-0.1A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
CISS
COSS
CRSS
VDS=-25V, VGS=0V, f=1MHz
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=-30V, VGS=-10V,
ID=-0.1A
VDD=-30V, ID=-0.1A,VGS=-10V,
RG=6,
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS= 0V, IS=-0.13A (Note)
Max. Diode Forward Current
IS
Pulsed Drain-Source Current
ISm
Note: Pulse test, pulse width 300us, duty cycle2%
MIN
-50
-0.8
-0.6
0.05
TYP
-1.7
1.2
0.6
73
10
5
0.9
0.2
0.3
2.5
6.3
10
4.8
-0.8
MAX UNIT
V
-15 µA
±10 µA
-2 V
10
A
S
pF
pF
pF
1.3 nC
nC
nC
5 ns
13 ns
20 ns
9.6 ns
-1.2
-0.13
-0.52
V
A
A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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BSS84Z
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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