BSS138L Datasheet PDF - ON Semiconductor

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BSS138L
ON Semiconductor

Part Number BSS138L
Description Power MOSFET
Page 5 Pages


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BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
NChannel SOT23
Typical applications are DCDC converters, power management in
portable and batterypowered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
Low Threshold Voltage (VGS(th): 0.5 V1.5 V) Makes it Ideal for
Low Voltage Applications
Miniature SOT23 Surface Mount Package Saves Board Space
BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
http://onsemi.com
200 mA, 50 V
RDS(on) = 3.5 W
NChannel
3
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
50
± 20
200
800
225
55 to 150
Vdc
Vdc
mA
mW
°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556 °C/W
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
3
1
2
SOT23
CASE 318
STYLE 21
MARKING
DIAGRAM
J1 M G
G
1
J1 = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BSS138LT1G
SOT23 3000 / Tape & Reel
(PbFree)
BVSS138LT1G SOT23 3000 / Tape & Reel
(PbFree)
BSS138LT3G
SOT23 10,000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
July, 2013 Rev. 8
1
Publication Order Number:
BSS138LT1/D
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BSS138L, BVSS138L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 150°C)
GateSource Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
GateSource Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static DraintoSource OnResistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
V(BR)DSS
IDSS
IGSS
50
− − Vdc
mAdc
0.1
0.5
5.0
±0.1 mAdc
VGS(th)
rDS(on)
gfs
0.5
5.6
−−
100
1.5 Vdc
W
10
3.5
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
TurnOff Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Ciss
Coss
Crss
td(on)
td(off)
40 50 pF
12 25
3.5 5.0
− − 20 ns
− − 20
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BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
TJ = 25°C
0.7
0.6
0.5
0.4
0.3
VGS = 3.5 V
VGS = 3.25 V
VGS = 3.0 V
VGS = 2.75 V
VGS = 2.5 V
0.2
0.1
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
0.9
VDS = 10 V
0.8
0.7
0.6
- 55°C
25°C
150°C
0.5
0.4
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
- 55
VGS = 10 V
ID = 0.8 A
VGS = 4.5 V
ID = 0.5 A
-5 45 95
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. OnResistance Variation with
Temperature
145
1.25
1.125
ID = 1.0 mA
1
0.875
0.75
- 55
-30 -5 20 45 70 95 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Threshold Voltage Variation
with Temperature
145
10
VDS = 40 V
TJ = 25°C
8
1.0E-5
1.0E-6
150°C
6
4
ID = 200 mA
2
1.0E-7
1.0E-8
125°C
0 1.0E-9
0 500 1000 1500 2000 2500 3000
0 5 10 15 20 25 30 35 40 45 50
QT, TOTAL GATE CHARGE (pC)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. Gate Charge
Figure 6. IDSS
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BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
10
9 VGS = 2.5 V
8
150°C
7
6
5 25°C
4
3 -55°C
2
1
0 0.05 0.1 0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS)
Figure 7. OnResistance versus Drain Current
8
VGS = 2.75 V
7
6
150°C
5
4
25°C
3
2 -55°C
1
0
0.05 0.1
0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS)
Figure 8. OnResistance versus Drain Current
6
5.5 VGS = 4.5 V
5
4.5
4
3.5
3
2.5
2
1.5
1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
ID, DRAIN CURRENT (AMPS)
150°C
25°C
-55°C
0.4 0.45
0.5
Figure 9. OnResistance versus Drain Current
1
0.1
TJ = 150°C 25°C
-55°C
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
1.2
4.5
VGS = 10 V
4
150°C
3.5
3
2.5 25°C
2
1.5 -55°C
1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
ID, DRAIN CURRENT (AMPS)
Figure 10. OnResistance versus Drain
Current
120
100
80
60
Ciss
40
Coss
20
Crss
00
5
10 15 20 25
Figure 12. Capacitance
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