BSS138 Datasheet PDF - Silikron Semiconductor


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BSS138
Silikron Semiconductor

Part Number BSS138
Description MOSFET
Page 8 Pages

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GENERAL FEATURES
VDS = 50V,ID = 0.22A
RDS(ON) < 6Ω @ VGS=4.5V
RDS(ON) < 3.5Ω @ VGS=10V
ESD Rating1000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
BSS138
Schematic diagram
APPLICATION
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
S138
BSS138
SOT-23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
ID(70)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
50
±20
0.22
0.18
0.88
0.43
-55 To 175
Unit
V
V
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350 /W
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BSS138
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=50V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 3)
BVGSO
VDS=0V, IG=±250uA
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250uA
VGS=10V, ID=0.22A
VGS=4.5V, ID=0.22A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
gFS VDS=10V,ID=0.22A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
TurnOn Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,VGS=10V,
RGEN=6ΩID=0.22A
TurnOff Fall Time
tf
Total Gate Charge
Qg
GateSource Charge
Qgs VDS=25V,ID=0.22A,VGS=10V
GateDrain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=0.44A
Min
50
±20
0.8
Typ
0.1
30
15
6
2.6
9
20
6
1.7
0.1
0.4
Max
1
10
1.5
3.5
6
2.4
1.4
Unit
V
μA
uA
V
V
Ω
S
PF
nS
nC
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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BSS138
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
Vin
D Vout
Vgs Rgen
G
S
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
90%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 3 Power Dissipation
TJ-Junction Temperature()
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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BSS138
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature()
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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